NVTFS5820NL Power MOSFET 60 V, 11.5 m , Single NChannel, 8FL Features Small Footprint (3.3x3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) NVTFS5820NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 57 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.3 V GS(TH) GS DS D Negative Threshold Temperature V /T 6.2 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V I = 8.7 A 10.1 11.5 m DS(on) GS D V = 4.5 V I = 7.3 A 13.0 15 GS D Forward Transconductance g V = 5 V, I = 10 A 24.6 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1462 pF iss Output Capacitance C 150 V = 0 V, f = 1.0 MHz, V = 25 V oss GS DS Reverse Transfer Capacitance C 96 rss Total Gate Charge Q V = 10 V, V = 48 V, I = 10 A 28 nC G(TOT) GS DS D V = 4.5 V, V = 48 V, I = 10 A 15 GS DS D Threshold Gate Charge Q 1 G(TH) GatetoSource Charge Q 4 GS V = 4.5 V, V = 48 V, I = 10 A GS DS D GatetoDrain Charge Q 8 GD Plateau Voltage V 3 V GP Gate Resistance R 0.62 G SWITCHING CHARACTERISTICS (Note 6) ns TurnOn Delay Time t 10 d(on) Rise Time t 28 r V = 4.5 V, V = 48 V, GS DS I = 10 A, R = 2.5 D G TurnOff Delay Time t 19 d(off) Fall Time t 22 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.79 1.2 V SD J V = 0 V, GS I = 10 A S T = 125C 0.65 J Reverse Recovery Time t 19 ns RR Charge Time t 13 a V = 0 V, d /d = 100 A/ s, GS IS t I = 10 A S Discharge Time t 6 b Reverse Recovery Charge Q 15 nC RR 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.