X-On Electronics has gained recognition as a prominent supplier of NVTFS5C454NLTAG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVTFS5C454NLTAG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVTFS5C454NLTAG ON Semiconductor

NVTFS5C454NLTAG electronic component of ON Semiconductor
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Part No.NVTFS5C454NLTAG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET T6 40VNCH LL IN U8FL
Datasheet: NVTFS5C454NLTAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.484 ea
Line Total: USD 2.48 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 0.7761

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.484
10 : USD 0.9135
100 : USD 0.6728
500 : USD 0.5313
1000 : USD 0.4255

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVTFS5C454NLTAG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVTFS5C454NLTAG and other electronic components in the MOSFETs category and beyond.

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NVTFS5C454NL Power MOSFET 40 V, 4.0 m , 85 A, Single NChannel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C454NLWF Wettable Flanks Product AECQ101 Qualified and PPAP Capable V R MAX I MAX (BR)DSS DS(on) D These Devices are PbFree and are RoHS Compliant 4.0 m 10 V 40 V 85 A 6.9 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V NChannel DSS GatetoSource Voltage V 20 V D (5 8) GS Continuous Drain T = 25C I 85 A C D Current R JC T = 100C 60 (Notes 1, 2, 3, 4) C Steady State Power Dissipation T = 25C P 55 W G (4) C D R (Notes 1, 2, 3) JC T = 100C 27 C S (1, 2, 3) Continuous Drain T = 25C I 20 A A D Current R JA T = 100C 14 (Notes 1 & 3, 4) A Steady MARKING DIAGRAM State Power Dissipation T = 25C P 3.2 W A D 1 R (Notes 1, 3) 1 JA S D T = 100C 1.6 A XXXX WDFN8 S D Pulsed Drain Current T = 25C, t = 10 s I 520 A AYWW DM ( 8FL) S D A p CASE 511AB G D Operating Junction and Storage Temperature T , T 55 to C J stg +175 XXXX = Specific Device Code Source Current (Body Diode) I 61 A S A = Assembly Location Y = Year Single Pulse DraintoSource Avalanche E 202 mJ AS Energy (I = 5 A) WW = Work Week L(pk) = PbFree Package Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering, marking and shipping information in the THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) package dimensions section on page 5 of this data sheet. Parameter Symbol Value Unit JunctiontoCase Steady State (Note 3) R 2.7 C/W JC JunctiontoAmbient Steady State (Note 3) R 47 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: April, 2019 Rev. 4 NVTFS5C454NL/DNVTFS5C454NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 40 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 50 A 1.2 2.2 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 20 A 3.3 4.0 m DS(on) GS D V = 4.5 V, I = 20 A 5.5 6.9 GS D Forward Transconductance g V = 15 V, I = 40 A 80 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 1600 pF iss GS V = 25 V DS Output Capacitance C 590 oss Reverse Transfer Capacitance C 21 rss Total Gate Charge Q 8.2 nC G(TOT) Threshold Gate Charge Q 2 nC G(TH) V = 4.5 V, V = 20 V, I = 40 A GS DS D GatetoSource Charge Q 3.8 GS GatetoDrain Charge Q 2.1 GD Total Gate Charge Q V = 10 V, V = 20 V, I = 40 A 18 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 9.3 ns d(on) Rise Time t 100 r V = 4.5 V, V = 20 V, GS DS I = 40 A D TurnOff Delay Time t 17 d(off) Fall Time t 4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.86 1.2 V SD GS J I = 40 A S T = 125C 0.75 J Reverse Recovery Time t 29 ns RR Charge Time t 14 a V = 0 V, dl /dt = 100 A/ s, GS S I = 40 A S Discharge Time t 15 b Reverse Recovery Charge Q 20 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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