DMPH3010LK3 Green 175C P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I D Rated to +175C Ideal for High Ambient Temperature V R Max (BR)DSS DS(ON) T = +25C C Environments -50A 7.5m V = -10V 100% Unclamped Inductive Switch (UIS) Test in Production GS -30V Low On-Resistance 10m V = -4.5V -45A GS Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) Mechanical Data making it ideal for high efficiency power management applications. Case: TO252 Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Backlighting Terminal Connections: See Diagram Terminals: Finish Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (Approximate) D TO252 D G D G S S Top View Top View Equivalent Circuit Pin-Out Ordering Information (Note 4) Part Number Case Packaging DMPH3010LK3-13 TO252 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMPH3010LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -50 C I A D State -40 T = +100C C Continuous Drain Current (Note 6), V = -10V GS Steady T = +25C -16 A A I D State -11 T = +100C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -100 A DM Maximum Body Diode Continuous Current (Note 6) I -3.5 A S Avalanche Current (Note 7), L = 0.1mH I -47 A AS Avalanche Energy (Note 7), L = 0.1mH E 113 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 2.0 W P D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 73 C/W JA Total Power Dissipation (Note 6) P 3.9 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) 38 R JA C/W Thermal Resistance, Junction to Case 1.0 R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1.0 A V = -30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1.1 -1.6 -2.1 V V = V , I = -250A GS(TH) DS GS D 5.7 7.5 V = -10V, I = -10A GS D Static Drain-Source On-Resistance m R DS(ON) 7.2 10 V = -4.5V, I = -10A GS D Diode Forward Voltage -0.65 -1.0 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 6807 pF C iss V = -15V, V = 0V, DS GS Output Capacitance 988 pF C oss f = 1.0MHz Reverse Transfer Capacitance 647 pF C rss Gate Resistance 6.2 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = -4.5V) Q 66 nC GS g Total Gate Charge (V = -10V) Q 139 nC GS g V = -15V, I = -10A DS D Gate-Source Charge Q 19.1 nC gs Gate-Drain Charge Q 21.7 nC gd Turn-On Delay Time t 9.0 ns D(ON) Turn-On Rise Time t 10.5 ns R V = -15V, V = -10V, DS GEN Turn-Off Delay Time 255 ns R = 6, I = -1A t G D D(OFF) Turn-Off Fall Time 95 ns t F Body Diode Reverse Recovery Time 27 ns t I = -10A, di/dt = -100A/s RR F Body Diode Reverse Recovery Charge 21 nC Q I = -10A, di/dt = -100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T =+ 25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMPH3010LK3 October 2015 Diodes Incorporated www.diodes.com Document number: DS38123 Rev. 1 - 2 NEW PRODUCT