X-On Electronics has gained recognition as a prominent supplier of DMPH3010LK3-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMPH3010LK3-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMPH3010LK3-13 Diodes Incorporated

DMPH3010LK3-13 electronic component of Diodes Incorporated
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Part No.DMPH3010LK3-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 25V 30V TO252 T&R 2.5K
Datasheet: DMPH3010LK3-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.122 ea
Line Total: USD 1.12 
Availability - 3037
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
29
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.855
10 : USD 0.8359
30 : USD 0.8225
100 : USD 0.8092

3037
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.122
10 : USD 0.7678
100 : USD 0.5423
500 : USD 0.4345
1000 : USD 0.396

   
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We are delighted to provide the DMPH3010LK3-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMPH3010LK3-13 and other electronic components in the MOSFETs category and beyond.

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DMPH3010LK3 Green 175C P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I D Rated to +175C Ideal for High Ambient Temperature V R Max (BR)DSS DS(ON) T = +25C C Environments -50A 7.5m V = -10V 100% Unclamped Inductive Switch (UIS) Test in Production GS -30V Low On-Resistance 10m V = -4.5V -45A GS Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) Mechanical Data making it ideal for high efficiency power management applications. Case: TO252 Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Backlighting Terminal Connections: See Diagram Terminals: Finish Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (Approximate) D TO252 D G D G S S Top View Top View Equivalent Circuit Pin-Out Ordering Information (Note 4) Part Number Case Packaging DMPH3010LK3-13 TO252 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMPH3010LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -50 C I A D State -40 T = +100C C Continuous Drain Current (Note 6), V = -10V GS Steady T = +25C -16 A A I D State -11 T = +100C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -100 A DM Maximum Body Diode Continuous Current (Note 6) I -3.5 A S Avalanche Current (Note 7), L = 0.1mH I -47 A AS Avalanche Energy (Note 7), L = 0.1mH E 113 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 2.0 W P D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 73 C/W JA Total Power Dissipation (Note 6) P 3.9 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) 38 R JA C/W Thermal Resistance, Junction to Case 1.0 R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1.0 A V = -30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1.1 -1.6 -2.1 V V = V , I = -250A GS(TH) DS GS D 5.7 7.5 V = -10V, I = -10A GS D Static Drain-Source On-Resistance m R DS(ON) 7.2 10 V = -4.5V, I = -10A GS D Diode Forward Voltage -0.65 -1.0 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 6807 pF C iss V = -15V, V = 0V, DS GS Output Capacitance 988 pF C oss f = 1.0MHz Reverse Transfer Capacitance 647 pF C rss Gate Resistance 6.2 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = -4.5V) Q 66 nC GS g Total Gate Charge (V = -10V) Q 139 nC GS g V = -15V, I = -10A DS D Gate-Source Charge Q 19.1 nC gs Gate-Drain Charge Q 21.7 nC gd Turn-On Delay Time t 9.0 ns D(ON) Turn-On Rise Time t 10.5 ns R V = -15V, V = -10V, DS GEN Turn-Off Delay Time 255 ns R = 6, I = -1A t G D D(OFF) Turn-Off Fall Time 95 ns t F Body Diode Reverse Recovery Time 27 ns t I = -10A, di/dt = -100A/s RR F Body Diode Reverse Recovery Charge 21 nC Q I = -10A, di/dt = -100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T =+ 25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMPH3010LK3 October 2015 Diodes Incorporated www.diodes.com Document number: DS38123 Rev. 1 - 2 NEW PRODUCT

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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