DMC3016LDV
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
PowerDI
Product Summary Features
Low On-Resistance
I Max
D
Device V R Max
(BR)DSS DS(ON)
T = +25C Low Input Capacitance
C
Fast Switching Speed
12m @ V = 10V 21A
GS
Q1 30V
Low Input/Output Leakage
18A
17m @ VGS = 4.5V
Complementary Pair MOSFET
-15A
25m @ V = -10V
GS
Q2 -30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
-12A
38m @ V = -4.5V
GS
Halogen and Antimony Free. Green Device (Note 3)
Mechanical Data
Description
Case: PowerDI3333-8 (Type UXC)
This new generation MOSFET is designed to minimize the on-state
Case Material: Molded Plastic, Green Molding Compound.
resistance (R ), yet maintain superior switching performance,
DS(ON)
UL Flammability Classification Rating 94V-0
making it ideal for high efficiency power management applications.
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Applications
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Power Management Functions
Solderable per MIL-STD-202, Method 208
Analog Switch
Weight: 0.072 grams (Approximate)
Equivalent Circuit
PowerDI3333-8 (Type UXC)
D1 D2
D1
D1
D2
D2
S1
G1 G2
G1
S2
G2
PIN1
S1 S2
Top View Bottom View
N-Channel MOSFET P-Channel MOSFET
Ordering Information (Note 4)
Part Number Case Packaging
DMC3016LDV-7 PowerDI3333-8 (Type UXC) 2,000/Tape & Reel
DMC3016LDV-13 PowerDI3333-8 (Type UXC) 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMC3016LDV
Maximum Ratings Q1 N-Channel (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage 20 V
VGSS
Steady T = +25C 21
C
A
Continuous Drain Current, V = 10V (Note 7) I
GS D
State 17
T = +70C
C
Maximum Body Diode Forward Current (Note 6) I 2 A
S
Pulsed Drain Current (380s pulse, Duty cycle = 1%) I 70 A
DM
Avalanche Current (L = 0.1mH) (Note 8) I 22 A
AS
Avalanche Energy (L = 0.1mH) (Note 8) E 24 mJ
AS
Maximum Ratings Q2 P-Channel (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage -30 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C -15
C
Continuous Drain Current, V = -10V (Note 7) I A
GS D
State -12
T = +70C
C
Maximum Body Diode Forward Current (Note 6) I -2 A
S
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) -40 A
IDM
Avalanche Current (L = 0.1mH) (Note 8) -22 A
I
AS
Avalanche Energy (L = 0.1mH) (Note 8) 24 mJ
E
AS
Thermal Characteristics (@TA = +25C, unless otherwise specified.)
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P 0.9 W
D
Steady State 136
Thermal Resistance, Junction to Ambient (Note 5) C/W
R
JA
t<10s 78
Total Power Dissipation (Note 6) P 1.8 W
D
Steady State 70
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<10s 41
C/W
Thermal Resistance, Junction to Case (Note 7) R 15
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I and E rating are based on low frequency and duty cycles to keep T = +25C.
AS AS J
2 of 10
DMC3016LDV July 2016
Diodes Incorporated
www.diodes.com
Document number: DS38936 Rev. 1 - 2
ADVANCED INFORMATION