NVTFS5C658NL Power MOSFET 60 V, 5.0 m , 109 A, Single NChannel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C658NLWF Wettable Flanks Product V R MAX I MAX (BR)DSS DS(on) D AECQ101 Qualified and PPAP Capable 5.0 m 10 V These Devices are PbFree and are RoHS Compliant 60 V 109 A 7.3 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit NChannel DraintoSource Voltage V 60 V D (5 8) DSS GatetoSource Voltage V 20 V GS Continuous Drain Cur- T = 25C I 109 A C D rent R (Notes 1, 2, JC T = 100C 77 G (4) 3, 4) C Steady State Power Dissipation T = 25C P 114 W C D R (Notes 1, 2, 3) JC S (1, 2, 3) T = 100C 57 C Continuous Drain Cur- T = 25C I 18 A A D MARKING DIAGRAM rent R (Notes 1 & JA T = 100C 15 3, 4) A 1 Steady 1 State S D Power Dissipation T = 25C P 3.2 W A D XXXX WDFN8 S D R (Notes 1, 3) JA T = 100C 2.2 AYWW ( 8FL) S D A G D CASE 511AB Pulsed Drain Current T = 25C, t = 10 s I 440 A DM A p Operating Junction and Storage Temperature T , T 55 to C J stg XXXX = Specific Device Code +175 A = Assembly Location Y = Year Source Current (Body Diode) I 127 A S WW = Work Week Single Pulse DraintoSource Avalanche E 142 mJ AS = PbFree Package Energy (I = 5.0 A) L(pk) (Note: Microdot may be in either location) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit JunctiontoCase Steady State (Note 3) R 1.3 C/W JC JunctiontoAmbient Steady State (Note 3) R 47 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: March, 2018 Rev. 1 NVTFS5C658NL/DNVTFS5C658NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 60 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 75 A 1.2 2.2 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 50 A 4.2 5.0 m DS(on) GS D V = 4.5 V, I = 50 A 5.8 7.3 GS D Forward Transconductance g V = 15 V, I = 50 A 100 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 1935 pF iss GS V = 25 V DS Output Capacitance C 890 oss Reverse Transfer Capacitance C 16 rss Total Gate Charge Q 12 nC G(TOT) Threshold Gate Charge Q 3.5 nC G(TH) V = 4.5 V, V = 48 V, I = 50 A GS DS D GatetoSource Charge Q 7 GS GatetoDrain Charge Q 2.4 GD Total Gate Charge Q V = 10 V, V = 48 V, I = 50 A 27 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 16 ns d(on) Rise Time t 96 r V = 4.5 V, V = 48 V, GS DS I = 50 A D TurnOff Delay Time t 36 d(off) Fall Time t 105 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.9 1.2 V SD GS J I = 50 A S T = 125C 0.8 J Reverse Recovery Time t 39 ns RR Charge Time t 21 a V = 0 V, dl /dt = 100 A/ s, GS S I = 50 A S Discharge Time t 18 b Reverse Recovery Charge Q 15 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2