X-On Electronics has gained recognition as a prominent supplier of IPB083N15N5LFATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB083N15N5LFATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPB083N15N5LFATMA1 Infineon

Name: IPB083N15N5LFATMA1
Brand: Infineon
SKU: IPB083N15N5LFATMA1_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IPB083N15N5LFATMA1 electronic component of Infineon

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Part No.	IPB083N15N5LFATMA1
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET TRENCH >=100V
Datasheet:	IPB083N15N5LFATMA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 7.6321 ea
Line Total: USD 7.63

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

IPB083N15N5LFATMA1 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 29 Nov to Thu. 05 Dec MOQ : 1000 Multiples : 1000	1000 : USD 4.9594 2000 : USD 4.9102 3000 : USD 4.8611 4000 : USD 4.8119 5000 : USD 4.7641 10000 : USD 4.3672 20000 : USD 4.3243 25000 : USD 4.2802 50000 : USD 4.2374

0 Ship by Wed. 27 Nov to Fri. 29 Nov MOQ : 1 Multiples : 1	1 : USD 7.6321 10 : USD 4.6653 25 : USD 4.3967 100 : USD 3.8297 250 : USD 3.7104 500 : USD 3.3523 1000 : USD 2.7455

We are delighted to provide the IPB083N15N5LFATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB083N15N5LFATMA1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

IPB083N15N5LF MOSFET TM DPAK OptiMOS 5 Linear FET , 150 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Drain Table 1 Key Performance Parameters Pin 2, Tab Parameter Value Unit V 150 V DS Gate Pin 1 RDS(on),max 8.3 m Source Pin 3 I 105 A D I pulse (V DS=56 V, tp=10 5.6 A ms) Type / Ordering Code Package Marking Related Links IPB083N15N5LF PG-TO 263-3 083N15LF - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.0, 2017-04-04TM OptiMOS 5 Linear FET , 150 V IPB083N15N5LF Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.0, 2017-04-04

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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INF
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INFINEON TECHNOLOGIES AG
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Infinite Power Solutions
INTERNATIONAL RECTIF
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INTL RECTIFIER
IR
IRH
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Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 105 A 105 A
Vds - Drain-Source Breakdown Voltage 150 V 150 V
Rds On - Drain-Source Resistance 6.9 mOhms 6.9 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 3.3 V 3.3 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 179 W 179 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TO - 263 - 3 TO - 263 - 3
Packaging Cut Tape Cut Tape
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 45 nC 45 nC
Channel Mode Enhancement Enhancement
Tradename Optimos Optimos
Configuration Single Single
Series Optimos 5 Optimos 5
Transistor Type 1 N - Channel 1 N - Channel
Brand Infineon Technologies Infineon Technologies
Forward Transconductance - Min 9 S 9 S
Fall Time 6 ns 6 ns
Product Type Mosfet Mosfet
Rise Time 46 ns 46 ns
Factory Pack Quantity : 1000 1000
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 25 ns 25 ns
Typical Turn-On Delay Time 7 ns 7 ns
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999