AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance V 55V DSS 175C Operating Temperature Fast Switching R max. 24.5m DS(on) Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant I 30A D Automotive Qualified * D D Description Specifically designed for Automotive applications, this HEXFET S Power MOSFET utilizes the latest processing techniques to S G D achieve extremely low on-resistance per silicon area. Additional G features of this design are a 175C junction operating temperature, D-Pak I-Pak fast switching speed and improved repetitive avalanche rating . AUIRFR4105Z AUIRFU4105Z These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide G D S variety of other applications. Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFU4105Z I-Pak Tube 75 AUIRFU4105Z Tube 75 AUIRFR4105Z AUIRFR4105Z D-Pak Tape and Reel Left 3000 AUIRFR4105ZTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 30 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 21 D C GS A I Pulsed Drain Current 120 DM P T = 25C Maximum Power Dissipation 48 W D C Linear Derating Factor 0.32 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 29 AS mJ E (Tested) Single Pulse Avalanche Energy Tested Value 46 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 3.12 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-12-1 AUIRFR/U4105Z Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.053 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 19 24.5 m V = 10V, I = 18A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 16 S V = 15V, I = 18A DS D 20 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 55V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 18 27 I = 18A g D Q Gate-to-Source Charge 5.3 nC V = 44V gs DS Q Gate-to-Drain Charge 7.0 V = 10V gd GS t Turn-On Delay Time 10 V = 28V d(on) DD t Rise Time 40 I = 18A r D ns t Turn-Off Delay Time 26 R = 24.5 d(off) G t Fall Time 24 V = 10V f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 740 V = 0V iss GS C Output Capacitance 140 V = 25V oss DS C Reverse Transfer Capacitance 74 = 1.0MHz rss pF C Output Capacitance 450 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 110 V = 0V, V = 44V = 1.0MHz oss GS DS C Effective Output Capacitance 180 V = 0V, V = 0V to 44V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 30 S (Body Diode) showing the A Pulsed Source Current integral reverse I 120 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 18A, V = 0V SD J S GS t Reverse Recovery Time 19 29 ns T = 25C ,I = 18A, V = 28V rr J F DD Q Reverse Recovery Charge 14 21 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 0.18mH, R = 25 , I = 18A, V =10V. Part not recommended for use above this value. Jmax , J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population, starting T = 25C, L = 0.18mH, R = 25, I = 18A, V =10V. J G AS GS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2015-12-1