DMT6010SCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I 100% Unclamped Inductive Switching Ensures More Reliable D BV R Max DSS DS(ON) T = +25C C and Robust End Application 60V 98A 7.2m V = 10V GS Low Input Capacitance Low Input/Output Leakage Lead-Free Finish RoHS compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Mechanical Data Applications Engine Management Systems Case: TO220-3 Body Control Electronics Case Material: Molded Plastic, Green Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 1.85 grams (Approximate) TO220-3 Top View Bottom View Equivalent Circuit Top View Pin Out Configuration Ordering Information (Note 4) Part Number Case Packaging DMT6010SCT TO220-3 50 Pieces/Tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMT6010SCT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS 98 TC = +25C Continuous Drain Current (Note 6) I A D 78 T = +70C C Maximum Continuous Body Diode Forward Current (Note 6) 100 A T = +25C I C S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 160 A I DM Avalanche Current, L=0.1mH 20 A I AS Avalanche Energy, L=0.1mH E 20 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 2.3 W A D Thermal Resistance, Junction to Ambient (Note 5) R 52.8 C/W JA Total Power Dissipation (Note 6) 104 W TC = +25C PD Thermal Resistance, Junction to Case (Note 6) 1.2 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 2 4 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 5.5 7.2 m V = 10V, I =20A DS(ON) GS D Diode Forward Voltage V 1.3 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 1,940 Input Capacitance C ISS V = 30V, V = 0V, DS GS 759 Output Capacitance C pF OSS f = 1MHz 85.2 Reverse Transfer Capacitance CRSS Gate Resistance 0.55 R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge 36.3 Q G Gate-Source Charge 7.5 nC Q V = 30V, I = 20A, V = 10V GS DS D GS Gate-Drain Charge 10.5 Q GD 5.7 Turn-On Delay Time t D(ON) 10.4 Turn-On Rise Time t R VDD = 30V, VGS = 10V, ns 16.3 Turn-Off Delay Time t I = 20A, R = 3 D(OFF) D G 11.2 Turn-Off Fall Time t F Reverse Recovery Time t 35.6 ns RR I = 20A, di/dt = 100A/s F Reverse Recovery Charge 37.9 nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on infinite heat sink. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 April 2016 DMT6010SCT www.diodes.com Diodes Incorporated Document number: DS38562 Rev. 1 - 2