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NVTFS5C680NL MOSFET Power, Single N-Channel 60 V, 26.5 m , 20 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses V R MAX I MAX (BR)DSS DS(on) D NVTFS5C680NLWF Wettable Flanks Product 26.5 m 10 V AECQ101 Qualified and PPAP Capable 60 V 20 A These Devices are PbFree and are RoHS Compliant 42.5 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J NChannel Parameter Symbol Value Unit D (5 8) DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS Continuous Drain I A T = 25C 20 C D Current R G (4) JC T = 100C 14 (Notes 1, 2, 3, 4) C Steady State Power Dissipation T = 25C P 20 W C D S (1, 2, 3) R (Notes 1, 2, 3) JC T = 100C 10 C Continuous Drain T = 25C I 7.82 A MARKING DIAGRAM A D Current R JA 1 T = 100C 6.54 (Notes 1 & 3, 4) A Steady 1 S D State XXXX Power Dissipation P W WDFN8 S D T = 25C 3.0 A D R (Notes 1, 3) AYWW ( 8FL) S D JA T = 100C 2.1 A G D CASE 511AB Pulsed Drain Current T = 25C, t = 10 s I 80 A A p DM XXXX = Specific Device Code Operating Junction and Storage Temperature T , T 55 to C J stg A = Assembly Location +175 Y = Year Source Current (Body Diode) I 17 A S WW = Work Week = PbFree Package Single Pulse DraintoSource Avalanche E 51 mJ AS Energy (I = 1 A) L(pk) (Note: Microdot may be in either location) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering, marking and shipping information in the device. If any of these limits are exceeded, device functionality should not be package dimensions section on page 5 of this data sheet. assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit JunctiontoCase Steady State (Note 3) R 7.32 C/W JC JunctiontoAmbient Steady State (Note 3) R 49 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2019 Rev. 2 NVTFS5C680NL/D