DATA SHEET www.onsemi.com MOSFET P-Channel, Logic Level, POWERTRENCH V R MAX I MAX DSS DS(ON) D 40 V 4.9 m 10 V 80 A -40 V, -80 A, 4.9 m S FDWS9508L-F085 Features G Typ R = 3,6 m at V = 10 V I = 80 A DS(on) GS D Typ Q = 82 nC at V = 10 V I = 80 A g(tot) GS D UIS Capability Wettable Flanks for Automatic Optical Inspection (AOI) D AECQ101 Qualified PChannel MOSFET These Devices are PbFree and are RoHS Compliant Applications Top Bottom D Automotive Engine Control D D D PowerTrain Management Solenoid and Motor Drivers G S S Electrical Power Steering S Integrated Starter/Alternator Pin 1 Distributed Power Architectures and VRM DFNW8 CASE 507AU Primary Switch for 12 V Systems MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise specified) MARKING DIAGRAM J Symbol Parameter Ratings Unit V Drain to Source Voltage 40 V DSS V Gate to Source Voltage 16 V GS ON AYWWWL FDWS I Drain Current (T = 25C) A D C Continuous (V = 10 V) (Note 1) 80 9508L GS Pulsed (see Fig. 4) E Single Pulse Avalanche Energy 211 mJ AS (Note 2) A = Assembly Location P Power Dissipation 214 W D Y = Year Derate Above 25C 1.43 W/C WW = Work Week WL = Assembly Lot T , T Operating and Storage Temperature 55 to +175 C J STG FDWS = Device Code R Thermal Resistance 0.7 C/W JC 9508L = Device Code (Junction to case) (Note: Microdot may be in either location) R Maximum Thermal Resistance 50 C/W JA (Junction to Ambient) (Note 3) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Device Package Shipping 1. Current is limited by wirebond configuration 2. Starting Tj = 25C, L = 0.1 mH, I = 65 A, V = 40 V during inductor FDWS9508LF085 DFNW8 3000 / AS DD charging and V = 0 V during time in avalanche DD (Power56) Tape & Reel 3. R is the sum of the junction to case and case to ambient thermal JA (PbFree) resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design while R JC JA For information on tape and reel specifications, is determined by the users board design. The maximum rating presented including part orientation and tape sizes, please 2 here is based on mounting on a 1 in pad of 2 oz copper. refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2021 Rev. 3 FDWS9508LF085/DFDWS9508L F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS B DraintoSource Breakdown I = 250 A, V = 0 V 40 V VDSS D GS Voltage I DraintoSource Leakage V = 40 V, V = 0 V, T = 25C 1 A DSS DS GS J Current V = 40 V, V = 0 V, T = 175C (Note 4) 1 mA DS GS J I GatetoSource Leakage V = 16 V, V = 0 V 100 nA GSS GS DS Current ON CHARACTERISTICS V GatetoSource Threshold V = V , I = 250 A 1.0 1.8 3.0 V GS(th) GS DS D Voltage R Drain to Source I = 80 A, V = 4.5 V, T = 25C 5.6 8.5 m DS(on) D GS J OnResistance I = 80 A, V = 10 V, T = 25C 3.6 4.9 D GS J I = 80 A, V = 10 V, T = 175C (Note 4) 5.9 8.0 D GS J DYNAMIC CHARACTERISTICS V = 20 V, V = 0 V, f = 1 MHz pF C Input Capacitance 4840 iss DS GS C Output Capacitance 2310 oss C Reverse Transfer Capacitance 49 rss R Gate Resistance f = 1 MHz 24 g Q Total Gate Charge at 10 V V = 0 V to 10 V V = 32 V, 82 107 nC g(ToT) GS DD I = 80 A D Q Threshold Gate Charge V = 0 V to 2 V 11 g(th) GS Q GatetoSource Gate Charge 20 gs Q GatetoDrain Miller Charge 10 gd SWITCHING CHARACTERISTICS t TurnOn Time V = 20 V, I = 80 A, 23 ns on DD D V = 10 V, R = 6 GS GEN t TurnOn Delay Time 10 d(on) t Rise Time 5 r t TurnOff Delay Time 389 d(off) t Fall Time 114 f t TurnOff Time 780 off DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode I = 80 A, V = 0 V 1.25 V SD SD GS Voltage I = 40 A, V = 0 V 1.2 SD GS t Reverse Recovery Time I = 80 A, I / t = 100 A/ s, 82 107 ns rr SD SD V = 32 V DD Q Reverse Recovery Charge 95 124 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTE: 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2