DATA SHEET www.onsemi.com MOSFET Power, Single V R MAX I MAX (BR)DSS DS(ON) D P-Chanel 20.5 m 10 V 40 V 30 A 32.0 m 4.5 V -40 V, -30 A, 20.5 m FDWS9511L-F085 D (5,6,7,8) Features Small Footprint (5x6 mm) for Compact Design G (4) Low R to Minimize Conduction Losses DS(on) Low QG and Capacitance to Minimize Driver Losses Wettable Flank Option for Enhanced Optical Inspection S (1,2,3) AECQ101 Qualified and PPAP Capable PChannel MOSFET These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Top Bottom D MAXIMUM RATINGS (T = 25C unless otherwise noted) D J D D Parameter Symbol Value Unit G DraintoSource Voltage V 40 V DSS S S S GatetoSource Voltage V 20 V GS Pin 1 Continuous Drain Steady T = 25C I 30 A C D DFNW8 State Current R JC CASE 507AU T = 100C 30 (Notes 1, 3) C Power Dissipation T = 25C P 68.2 W C D R (Note 1) JC MARKING DIAGRAM T = 100C 34.1 C Continuous Drain Steady T = 25C I 9.1 A C D Current R State JA T = 100C 6.5 (Notes 1, 2, 3) C ON Power Dissipation T = 25C P 3.0 W AYWWWL C D R (Notes 1, 2) JA FDWS T = 100C 1.5 C 9511L Pulsed Drain Current I 298 A T = 25C, t = 10 s C p DM Operating Junction and Storage Temperature T , T 55 to C J STG Range +175 A = Assembly Location Source Current (Body Diode) I 100 A S Y = Year Single Pulse DraintoSource Avalanche E 25 mJ WW = Work Week AS Energy (I = 25) L(pk) WL = Assembly Lot FDWS = Device Code Lead Temperature for Soldering Purposes T 260 C L 9511L = Device Code (1/8 from case for 10 s) (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Device Package Shipping FDWS9511LF085 DFNW8 3000 / JunctiontoCase Steady State R 2.2 C/W JC (Power56) Tape & Reel JunctiontoAmbient Steady State (Note 2) 50 R JA (PbFree) 1. The entire application environment impacts the thermal resistance values For information on tape and reel specifications, shown, they are not constants and are only valid for the particular conditions including part orientation and tape sizes, please noted. Current is limited by wirebond configuration 2 refer to our Tape and Reel Packaging Specification 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. Brochure, BRD8011/D. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: October, 2021 Rev. 2 FDWS9511LF085/DFDWS9511LF085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 20 mV/C (BR)DSS Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1 A DSS GS J V = 40 V DS T = 175C 1 mA J Zero Gate Voltage Drain Current I V = 0 V, V = 16 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1 1.8 3 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.1 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 17 20.5 m DS(on) GS D V = 4.5 V I = 15 A 26 34 GS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 100 KHz, V = 20 V 1200 pF ISS GS DS Output Capacitance C 470 OSS Reverse Transfer Capacitance C 26 RSS Gate Resistance R V = 0.5 V, f = 1 MHz 37 G GS Total Gate Charge Q V = 4.5 V, V = 20 V I = 30 A 8 nC G(TOT) GS DS D V = 10 V, V = 20 V I = 30 A 18 GS DS D Threshold Gate Charge Q V = 0 to 1 V 1 G(TH) GS GatetoSource Gate Charge Q V = 20 V, I = 30 A 4 GS DD D GatetoDrain Miller Charge Q 3 GD Plateau Voltage V 3.8 V GP SWITCHING CHARACTERISTICS V = 20 V, I = 30 A, ns TurnOn Delay Time t 8 d(ON) DD D V = 10 V, R = 6 GS GEN TurnOn Rise Time t 28 r TurnOff Delay Time t 112 d(OFF) TurnOff Fall Time t 40 f DRAINSOURCE DIODE CHARACTERISTICS SourcetoDrain Diode Voltage V I = 30 A, V = 0 V 0.9 1.3 V SD SD GS I = 15 A, V = 0 V 0.85 1.2 SD GS Reverse Recovery Time t V = 0 V, dI /dt = 100 A/ s, 36 ns RR GS SD I = 30 A S Charge Time t 18 a Discharge Time t 18 b Reverse Recovery Charge Q 24 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2