TSM650P02CX 20V P-Channel Power MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate Parameter Value Unit 2. Source 3. Drain V -20 V DS V =- 4.5V 65 GS Note: V = -2.5V R (max) GS 85 m MSL 1 (Moisture Sensitivity Level) DS(on) per J-STD-020 V = -1.8V GS 130 Q 6.4 nC g Block Diagram Features Fast switching Suited for -1.8V gate drive applications Halogen-free Ordering Information Ordering code Package Packing TSM650P02CX RFG SOT-23 3kcs / 7 Reel Note: Halogen-free according to IEC 61249-2-21 definition P-Channel MOSFET Absolute Maximum Ratings (T = 25C unless otherwise noted) C Limit Parameter Symbol Unit Drain-Source Voltage V V DS -20 Gate-Source Voltage V V GS 10 T = 25C A C -4.1 Continuous Drain Current I D T = 100C A C -2.6 (Note 1) Pulsed Drain Current I A DM -16.4 Power Dissipation T = 25 P 1.56 W C D Operating Junction Temperature T 150 C J -55 to +150 Storage Temperature Range T C STG Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Ambient R 80 C/W JA 1/5 Version: B1811 TSM650P02CX 20V P-Channel Power MOSFET Electrical Specifications (T = 25C unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = -250A BV V -20 -- -- GS D DSS V = -4.5V, I = -3A -- 52 65 GS D V = -2.5V, I = -2A -- 73 85 Drain-Source On-State Resistance GS D R m DS(on) V = -1.8V, I = -1.5A -- 105 130 GS D Gate Threshold Voltage V = V , I = -250A V -0.4 -0.6 -0.8 V DS GS D GS(TH) V = -20V, V = 0V -- -- -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -16V, T = 125C -- -- -10 DS J Gate Body Leakage V = 10V, V = 0V I nA GS DS GSS -- -- 100 (Note 2) Forward Transconductance V = -10V, I = -3A g S -- 5.5 -- DS D fs Dynamic (Note 2,3) Total Gate Charge Q 6.4 g -- -- V = -10V, I = -3A, (Note 2,3) DS D Gate-Source Charge Q 0.9 gs -- -- nC V = -4.5V GS (Note 2,3) Gate-Drain Charge Q 1.6 -- -- gd Input Capacitance C 515 -- -- iss V = -10V, V = 0V, DS GS Output Capacitance C 55 oss -- -- pF f = 1.0MHz Reverse Transfer Capacitance C 20 rss -- -- Switching (Note 2,3) Turn-On Delay Time t 5 -- -- d(on) (Note 2,3) Turn-On Rise Time t 17.4 r -- -- V = -10V, I = -1A, DD D ns (Note 2,3) V = -4.5V, R = 25 Turn-Off Delay Time t 40.7 GS GEN d(off) -- -- (Note 2,3) Turn-Off Fall Time t 11.4 -- -- f Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source -4.1 I -- -- A S Diode Forward Current Integral reverse diode in the MOSFET Maximum Pulse Drain-Source Diode -16.4 I -- -- A SM Forward Current Diode-Source Forward Voltage V = 0V, I = -1A V -1 V -- -- GS S SD Note: 1. Pulse width limited by safe operating area 2. Pulse test: pulse width 300s, duty cycle 2% 3. Switching time is essentially independent of operating temperature. 2/5 Version: B1811