X-On Electronics has gained recognition as a prominent supplier of TSM70N1R4CP MOSFETs across the USA, India, Europe, Australia, and various other global locations. TSM70N1R4CP MOSFETs are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TSM70N1R4CP Taiwan Semiconductor

TSM70N1R4CP electronic component of Taiwan Semiconductor
TSM70N1R4CP Taiwan Semiconductor
TSM70N1R4CP MOSFETs
TSM70N1R4CP  Semiconductors

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Part No. TSM70N1R4CP
Manufacturer: Taiwan Semiconductor
Category: MOSFETs
Description: MOSFET Power MOSFET, N-CHAN 700V, 3.3A, 1400mOhm
Datasheet: TSM70N1R4CP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.419 ea
Line Total: USD 1.42 
Availability - 43
Ship by Thu. 02 Jan to Mon. 06 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
43
Ship by Thu. 02 Jan to Mon. 06 Jan
MOQ : 1
Multiples : 1
1 : USD 1.419
100 : USD 1.0846
250 : USD 1.0164
500 : USD 0.9317
1000 : USD 0.8448
2500 : USD 0.7535
5000 : USD 0.6996
10000 : USD 0.6897

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Type
Brand
Factory Pack Quantity :
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TSM70N1R4CP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSM70N1R4CP and other electronic components in the MOSFETs category and beyond.

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7 TSM70N1R4 Taiwan Semiconductor N-Channel Power MOSFET 700V, 3.3A, 1.4 FEATURES KEY PERFORMANCE PARAMETERS Super-Junction technology PARAMETER VALUE UNIT High performance due to small figure-of-merit V 700 V DS High ruggedness performance R (max) 1.4 DS(on) High commutation performance Q 7.7 nC g APPLICATION Power Supply Lighting TO-251 (IPAK) TO-252 (DPAK) Notes: MSL 3 (Moisture Sensitivity Level) for TO-252 (D-PAK) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 700 V DS Gate-Source Voltage V 30 V GS T = 25C 3.3 C (Note 1) Continuous Drain Current I A D T = 100C 2.0 C (Note 2) Pulsed Drain Current I 9.9 A DM Total Power Dissipation T = 25C P 38 W C DTOT (Note 3) Single Pulsed Avalanche Energy E 64 mJ AS (Note 3) Single Pulsed Avalanche Current I 1.6 A AS Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 3.3 C/W JC Junction to Ambient Thermal Resistance R 62 C/W JA Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined JA at the solder mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board JA CA design. R shown below for single device operation on FR-4 PCB in still air. JA Document Number: DS P0000136 1 Version: D1706 7 TSM70N1R4 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) C PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 700 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 2 3 4 DS GS D GS(TH) V Gate Body Leakage V = 30V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 700V, V = 0V I -- -- 1 DS GS DSS A V = 10V, I = 1.2A -- 0.9 1.4 Drain-Source On-State Resistance R GS D DS(ON) (Note 5) Dynamic Total Gate Charge Q -- 7.7 -- g V = 380V, I = 3.3A, DS D Gate-Source Charge Q -- 1.9 -- gs nC V = 10V GS Gate-Drain Charge Q -- 2.8 -- gd Input Capacitance C -- 370 -- V = 100V, V = 0V, iss DS GS pF Output Capacitance f = 1.0MHz C -- 34 -- oss Gate Resistance F = 1MHz, open drain R -- 3.4 -- g (Note 6) Switching Turn-On Delay Time t -- 14 -- d(on) V = 380V, DD Turn-On Rise Time t -- 22 -- r R = 25, ns GEN Turn-Off Delay Time t -- 24 -- d(off) I = 3.3A, V = 10V, D GS Turn-Off Fall Time t -- 20 -- f (Note 4) Source-Drain Diode Forward On Voltage -- -- 1.4 V I = 3.3A, V = 0V V S GS SD Reverse Recovery Time -- 163 -- ns t V = 200V, I = 2A rr R S Reverse Recovery Charge dI /dt = 100A/s Q -- 1 -- C F rr Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature o 3. L = 50mH, I = 1.6A, V = 50V, R = 25, Starting T = 25 C AS DD G J 4. Pulse test: PW 300s, duty cycle 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. Document Number: DS P0000136 2 Version: D1706

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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