VS-FB190SA10 www.vishay.com Vishay Semiconductors Power MOSFET, 190 A FEATURES Fully isolated package Very low on-resistance Fully avalanche rated Dynamic dV/dt rating Low drain to case capacitance Low internal inductance Optimized for SMPS applications Easy to use and parallel SOT-227 Industry standard outline Designed and qualified for industrial level UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION PRIMARY CHARACTERISTICS High current density power MOSFETs are paralleled into a V 100 V DSS compact, high power module providing the best I DC 190 A D combination of switching, ruggedized device design, very R 6.5 m DS(on) low on-resistance and cost effectiveness. Type Modules - MOSFET The isolated SOT-227 package is preferred for all Package SOT-227 commercial-industrial applications at power dissipation levels to approximately higher than 500 W. The low thermal resistance and easy connection to the SOT-227 package contribute to its universal acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS T = 40 C 190 C Continuous drain current at V 10 V I GS D T = 100 C 130 A C Pulsed drain current I 720 DM Power dissipation P T = 25 C 568 W D C Linear derating factor 2.7 W/C Gate to source voltage V 20 V GS (2) Single pulse avalanche energy E 700 mJ AS (1) Avalanche current I 180 A AR (1) Repetitive avalanche energy E 48 mJ AR (3) Peak diode recovery dV/dt dV/dt 5.7 V/ns Operating junction and storage temperature range T , T -55 to +150 C J Stg Insulation withstand voltage (AC-RMS) V 2.5 kV ISO Mounting torque M4 screw 1.3 Nm Notes (1) Repetitive rating pulse width limited by maximum junction temperature (2) Starting T = 25 C, L = 43 H, R = 25 , I = 180 A J g AS (3) I 180 A, dI/dt 83 A/s, V V , T 150 C SD DD (BR)DSS J Revision: 02-Oct-2018 Document Number: 93459 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-FB190SA10 www.vishay.com Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T , T -55 - 150 C J Stg Junction to case R - - 0.22 thJC C/W Case to heatsink R Flat, greased surface - 0.05 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Mounting torque Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Case style SOT-227 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Drain to source breakdown voltage V V = 0 V, I = 250 A 100 - - V (BR)DSS GS D Breakdown voltage temperature V /T Reference to 25 C, I = 1 mA - 0.093 - V/C (BR)DSS J D coefficient Static drain to source on-resistance R V = 10 V, I = 180 A - 5.4 6.5 m DS(on) GS D Gate threshold voltage V V = V , I = 250 A 2.0 3.3 4.35 V GS(th) DS GS D Forward transconductance g V = 25 V, I = 180 A 93 - - S fs DS D V = 100 V, V = 0 V - - 50 DS GS Drain to source leakage current I A DSS V = 80 V, V = 0 V, T = 125 C - - 500 DS GS J V = 20 V - - 200 GS Gate to source forward leakage I nA GSS V = - 20 V - - - 200 GS Total gate charge Q - 250 - g I = 180 A D Gate to source charge Q V = 80 V -40 - nC gs DS V = 10 V GS Gate to drain (Miller) charge Q -110- gd Turn-on delay time t -45 - d(on) V = 50 V DD Rise time t I = 180 A - 351 - r D ns R = 2.0 (internal) Turn-off delay time t - 181 - d(off) g R = 0.27 D Fall time t -335- f Internal source inductance L Between lead, and center of die contact - 5.0 - nH S Input capacitance C - 10 700 - iss V = 0 V GS Output capacitance C V = 25 V - 2800 - pF oss DS f = 1.0 MHz Reverse transfer capacitance C - 1300 - rss SOURCE-DRAIN RATINGS AND CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Continuous source current D I - - 190 S MOSFET symbol (body diode) showing the integral A G reverse p-n junction diode. Pulsed source current (body diode) I - - 740 SM S Diode forward voltage V T = 25 C, I = 180 A, V = 0 V - 1.0 1.3 V SD J S GS Reverse recovery time t T = 25 C, I = 180 A, dI/dt = 100 A/s - 300 - ns rr J F Reverse recovery charge Q -2.6 - C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L + L ) on S D Revision: 02-Oct-2018 Document Number: 93459 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000