VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 108 A FEATURES Generation 5 Non Punch Through (NPT) technology Ultrafast: optimized for hard switching speed Low V CE(on) 10 s short circuit capability Square RBSOA Positive V temperature coefficient CE(on) HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package INT-A-PAK Al O DBC 2 3 UL approved file E78996 Designed for industrial level Material categorization: for definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 V 600 V CES I DC 108 A C BENEFITS V at 100 A, 25 C 2.6 V CE(on) Benchmark efficiency for UPS and welding application Speed 8 kHz to 30 kHz Rugged transient performance Package INT-A-PAK Direct mounting on heatsink Circuit Half bridge Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Collector to emitter voltage V 600 V CES T = 25 C 108 C Continuous collector current I C T = 80 C 74 C Pulsed collector current I 200 CM A Clamped inductive load current I 200 LM T = 25 C 106 C Diode continuous forward current I F T = 80 C 69 C Gate to emitter voltage V 20 V GE T = 25 C 390 C Maximum power dissipation P W D T = 80 C 219 C Isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL Operating junction temperature range T -40 to +150 J C Storage temperature range T -40 to +150 Stg Revision: 10-Jun-15 Document Number: 94501 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 500 A 600 - - BR(CES) GE C V = 15 V, I = 50 A - 1.95 2.1 GE C V = 15 V, I = 100 A - 2.6 2.85 GE C Collector to emitter voltage V V CE(on) V = 15 V, I = 50 A, T = 125 C - 2.21 2.44 GE C J V = 15 V, I = 100 A, T = 125 C - 3.05 3.38 GE C J Gate threshold voltage V V = V , I = 500 A 3 4.6 6 GE(th) CE GE C V = 0 V, V = 600 V - 0.01 0.1 GE CE Collector to emitter leakage current I mA CES V = 0 V, V = 600 V, T = 150 C - 3.7 10 GE CE J I = 50 A - 1.35 1.66 C I = 100 A - 1.57 1.96 C Diode forward voltage drop V V FM I = 50 A, T = 125 C - 1.27 1.50 C J I = 100 A, T = 125 C - 1.57 1.89 C J Gate to emitter leakage current I V = 20 V - - 200 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Turn-on switching loss E -0.6 - on I = 100 A, V = 360 V, V = 15 V, C CC GE Turn-off switching loss E -1.1 - off R = 4.7 , L = 200 H, T = 25 C g J Total switching loss E -1.7 - tot mJ Turn-on switching loss E -0.8 - on Turn-off switching loss E -1.3 - off Total switching loss E -2.1 - tot I = 100 A, V = 360 V, V = 15 V, C CC GE Turn-on delay time t - 197 - d(on) R = 4.7 , L = 200 H, T = 125 C g J Rise time t -50- r ns Turn-off delay time t - 225 - d(off) Fall time t -72- f T = 150 C, I = 200 A, J C Reverse bias safe operating area RBSOA Fullsquare R = 27 V = 15 V to 0 g GE T = 150 C, V = 400 V, V = 600 V, J CC P Short circuit safe operating area SCSOA 10 - - R = 27 V = 15 V to 0 g GE Diode reverse recovery time t - 116 140 ns rr I = 50 A, dI /dt = 200 A/s, F F Diode peak reverse current I -11 15 A rr V = 400 V, T = 25 C CC J Diode recovery charge Q - 600 1050 nC rr Diode reverse recovery time t - 152 190 ns rr I = 50 A, dI /dt = 200 A/s, F F Diode peak reverse current I -16 20 A rr V = 400 V, T = 125 C CC J Diode recovery charge Q - 1215 1900 nC rr THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOLMIN. TYP. MAX. UNITS Operating junction and storage temperature range T , T -40 - 150 C J Stg IGBT -0.23 0.32 Junction to case per leg R thJC Diode - 0.38 0.64 C/W Case to sink per module R -0.1 - thCS case to heatsink - - 4 Mounting torque Nm case to terminal 1, 2, 3 - - 3 Weight - 185 - g Revision: 10-Jun-15 Document Number: 94501 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000