VS-GB50YF120N www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 50 A FEATURES Square RBSOA HEXFRED low Q , low switching energy rr Positive V temperature coefficient CE(on) Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 BENEFITS PRIMARY CHARACTERISTICS Benchmark efficiency for SMPS appreciation in particular V 1200 V CES HF welding I at T = 66 C 50 A C C Rugged transient performance V (typical) 3.49 V CE(on) Low EMI, requires less snubbing Speed 8 kHz to 30 kHz Direct mounting to heatsink space saving Package ECONO 2 PCB solderable terminals Circuit configuration 4 pack Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX.UNITS Collector to emitter voltage V 1200 V CES T = 25 C 66 C Continuous collector current I C T = 80 C 44 C Pulsed collector current I 150 CM See fig. C.T.5 A Clamped inductive load current I 150 LM T = 25 C 40 C Diode continuous forward current I F T = 80 C 25 C Diode maximum forward current I 150 FM Gate to emitter voltage V 20 V GE T = 25 C 330 C Maximum power dissipation (IGBT) P W D T = 80 C 180 C Maximum operating junction temperature T 150 J C Storage temperature range T -40 to +125 Stg Isolation voltage V AC 2500 (min) V ISOL Revision: 20-Sep-17 Document Number: 93653 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-GB50YF120N www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage BV V = 0 V, I = 500 A 1200 - - (CES) GE C I = 50 A, V = 15 V - 3.49 3.9 C GE I = 75 A, V = 15 V - 4.15 4.5 C GE Collector to emitter voltage V V CE(ON) I = 50 A, V = 15 V, T = 125 C - 4.16 4.5 C GE J I = 75 A, V = 15 V, T = 125 C - 4.97 5.4 C GE J Gate threshold voltage V V = V , I = 250 A 4.0 4.9 6.0 GE(th) CE GE C Threshold voltage temperature coefficient V /T V = V , I = 1 mA (25 C to 125 C) - -10 - mV/C GE(th) J CE GE C V = 0 V, V = 1200 V - 11 250 GE CE Zero gate voltage collector current I A CES V = 0 V, V = 1200 V, T = 125 C - 600 1000 GE CE J I = 50 A - 3.30 4.5 F I = 75 A - 3.90 5.0 F Diode forward voltage drop V V FM I = 50 A, T = 125 C - 3.6 4.8 F J I = 75 A, T = 125 C - 4.37 5.5 F J Gate to emitter leakage current I V = 20 V - - 200 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q - 400 - G I = 50 A C Gate to emitter charge (turn-on) Q V = 600 V -43 - nC GE CC V = 15 V GE Gate to collector charge (turn-on) Q - 187 - GC Turn-on switching loss E -0.93 - on I = 50 A, V = 600 V C CC Turn-off switching loss E V = 15 V, R = 4.7 , L = 500 H -1.20 - off GE G (1) T = 25 C J Total switching loss E -2.13 - tot mJ Turn-on switching loss E -1.68 - on I = 50 A, V = 600 V C CC Turn-off switching loss E V = 15 V, R = 4.7 , L = 500 H -1.77 - off GE G (1) T = 125 C J Total switching loss E -3.46 - tot Turn-on delay time t - 128 - d(on) I = 50 A, V = 600 V C CC Rise time t -56 - r V = 15 V, R = 4.7 , L = 500 H ns GE G Turn-off delay time t - 292 - d(off) T = 125 C J Fall time t - 134 - f T = 150 C, I = 150 A J C Reverse bias safe operating area RBSOA Fullsquare R = 10 , V = 15 V to 0 V G GE T = 150 C J Short circuit safe operating area SCSOA V = 900 V, V = 1200 V 10 - - s CC P R = 10 , V = 15 V to 0 V G GE T = 25 C -1.3 2.3 J A Diode peak reverse recovery current I rr T = 125 C - 2.0 3 J V = 600 V CC T = 25 C - 0.453 0.49 J Diode reverse recovery time t I = 50 A s rr F T = 125 C - 0.74 0.82 J dI/dt = 7 A/s T = 25 C - 0.12 0.3 J Total reverse recovery charge Q C rr T = 125 C - 0.4 1.5 J Note (1) Energy losses include tail and diode reverse recovery Revision: 20-Sep-17 Document Number: 93653 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000