X-On Electronics has gained recognition as a prominent supplier of SKIIP38AC12T4V1:SK IGBT Modules across the USA, India, Europe, Australia, and various other global locations. SKIIP38AC12T4V1:SK IGBT Modules are a product manufactured by Semikron. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

SKIIP38AC12T4V1:SK Semikron

SKIIP38AC12T4V1:SK electronic component of Semikron
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Part No.SKIIP38AC12T4V1:SK
Manufacturer: Semikron
Category: IGBT Modules
Description: SKIIP38AC12T4V1SK semikron igbt modules transistors discrete semiconductors
Datasheet: SKIIP38AC12T4V1:SK Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 70.0524 ea
Line Total: USD 140.1 
Availability - 0
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 2
Multiples : 1
2 : USD 70.0524

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the SKIIP38AC12T4V1:SK from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SKIIP38AC12T4V1:SK and other electronic components in the IGBT Modules category and beyond.

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SKiiP 38AC12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT V T =25C 1200 V CES j I T =25C 115 A C s T = 175 C j T =70C 93 A s I 100 A Cnom I I = 3 x I 300 A CRM CRM Cnom V -20 ... 20 V GES V = 800 V CC MiniSKiiP 3 t V 15 V T =150 C 10 s psc GE j V 1200 V CES T -40 ... 175 C j Inverse - Diode I T =25C 100 A F s T = 175 C j SKiiP 38AC12T4V1 T =70C 79 A s I 100 A Fnom I I = 3 x I 300 A FRM FRM Fnom Features I 10 ms, sin 180, T =150 C 550 A FSM j Trench 4 IGBTs T -40 ... 175 C j Robust and soft freewheeling diodes in Module CAL technology Highly reliable spring contacts for I T = 80 C, 20A per spring 160 A terminal t(RMS) electrical connections T -40 ... 125 C stg UL recognised file no. E63532 V AC sinus 50Hz, t = 1 min 2500 V isol Typical Applications* Characteristics Inverter up to 41 kVA Symbol Conditions min. typ. max. Unit Typical motor power 22 kW Inverter - IGBT I =100A V C T =25C 1.80 2.05 V j CE(sat) Remarks V =15V GE T =150 C 2.20 2.40 V j V , V = chip level value CEsat F chiplevel Case temp. limited to T = 125C max. C V T =25C 0.8 0.9 V CE0 j (for baseplateless modules T = T ) C S T =150 C 0.7 0.8 V j product rel. results valid for T 150 j r T =25C 10 12 m CE j (recomm. T = -40 ... +150C) op V =15V GE For short circuit: Soft R T =150 C 15 16 m Goff j recommended V V =V , I =4mA 55.8 6.5 V GE(th) GE CE C I T =25C 0.1 0.3 mA CES V =0V j GE V = 1200 V CE mA C f=1MHz 6.15 nF ies V =25V CE C f=1MHz 0.41 nF oes V =0V GE C f=1MHz 0.34 nF res Q - 8 V...+ 15 V 565 nC G R T =25C 7.50 Gint j t T =150 C 160 ns d(on) V = 600 V j CC I =100A C t T =150 C 45 ns r j R =1 G on E T =150 C 13.7 mJ on j R =1 G off t T =150 C 395 ns d(off) j di/dt = 2080 A/s on t T =150 C 73 ns f di/dt =1240A/s j off V = +15/-15 V E GE T =150 C 9.7 mJ off j R per IGBT 0.48 K/W th(j-s) AC by SEMIKRON Rev. 3 05.12.2011 1SKiiP 38AC12T4V1 Characteristics Symbol Conditions min. typ. max. Unit Inverse - Diode I = 100 A V = V F T =25C 2.2 2.5 V F EC j V =0V GE T =150 C 2.1 2.5 V j chiplevel V T =25C 1.3 1.5 V j F0 T =150 C 0.9 1.1 V j r T =25C 9.0 10 m j F T =150 C 13 14 m j MiniSKiiP 3 I = 100 A I F T =150 C 112 A j RRM di/dt =2680A/s off Q T =150 C 16 C j rr V =-15V GE E T =150 C 6.5 mJ rr j V = 600 V CC R per Diode 0.66 K/W th(j-s) Module SKiiP 38AC12T4V1 M to heat sink 2 2.5 Nm s w95g Temperatur Sensor Features 1670 Trench 4 IGBTs R T =100C (R =1000 ) 100 C 25 3% Robust and soft freewheeling diodes in 2 R(T)=1000 1+A(T-25C)+B(T-25C) CAL technology -3 -1 R(T) , A = 7.635*10 C , Highly reliable spring contacts for -5 -2 B = 1.731*10 C electrical connections UL recognised file no. E63532 Typical Applications* Inverter up to 41 kVA Typical motor power 22 kW Remarks V , V = chip level value CEsat F Case temp. limited to T = 125C max. C (for baseplateless modules T = T ) C S product rel. results valid for T 150 j (recomm. T = -40 ... +150C) op For short circuit: Soft R Goff recommended AC 2 Rev. 3 05.12.2011 by SEMIKRON

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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