SKM200GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 1200 V CES j I T =25C 311 A C c T = 175 C j T =80C 237 A c I 200 A Cnom I I = 3xI 600 A CRM CRM Cnom V -20 ... 20 V GES V = 720 V CC SEMITRANS 3 t V 20 V T =125 C 10 s psc GE j V 1200 V CES T -40 ... 175 C j Inverse diode I T =25C 229 A F c T = 175 C j SKM200GB12V T =80C 172 A c I 200 A Fnom I I = 3xI 600 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 990 A FSM p j V-IGBT = 6. Generation Trench V-IGBT T -40 ... 175 C j (Fuji) Module CAL4 = Soft switching 4. Generation CAL-diode I T =80 C 500 A terminal t(RMS) Isolated copper baseplate using DBC T -40 ... 125 C stg technology (Direct Copper Bonding) V AC sinus 50Hz, t = 1 min 4000 V isol UL recognized, file no. E63532 Increased power cycling capability Characteristics With integrated gate resistor Low switching losses at high di/dt Symbol Conditions min. typ. max. Unit Typical Applications* IGBT AC inverter drives I =200A V C T =25C 1.75 2.20 V j CE(sat) UPS V =15V GE T =150 C 2.20 2.50 V j Electronic welders chiplevel V T =25C 0.94 1.04 V CE0 j Remarks T =150 C 0.88 0.98 V j Case temperature limited to r T =25C 4.05 5.8 m CE j T = 125C max, recomm. c V =15V GE T = -40 ... +150C, product T =150 C 6.60 7.60 m op j rel. results valid for T = 150 j V V =V , I = 8 mA 5.5 6 6.5 V GE(th) GE CE C I T =25C 0.1 0.3 mA CES V =0V j GE V = 1200 V CE T =150 C mA j C f=1MHz 12.02 nF ies V =25V CE C f=1MHz 1.18 nF oes V =0V GE C f=1MHz 1.178 nF res Q V = - 8 V...+ 15 V 2210 nC G GE R 3.8 Gint V = 600 V t CC T =150 C 320 ns d(on) j I =200A C t T =150 C 45 ns r j V =15V GE E T =150 C 14 mJ on j R =3 G on t T =150 C 550 ns d(off) R =3 j G off di/dt = 7000 A/s t on T =150 C 72 ns f j di/dt =2300A/s off du/dt = 6900 V/ E off T =150 C 22 mJ off j s R per IGBT 0.14 K/W th(j-c) GB by SEMIKRON Rev. 5 17.06.2011 1SKM200GB12V Characteristics Symbol Conditions min. typ. max. Unit Inverse diode I = 200 A V = V F T =25C 2.20 2.52 V F EC j V =0V GE T =150 C 2.15 2.47 V j chip V T =25C 1.3 1.5 V j F0 T =150 C 0.9 1.1 V j r T =25C 4.5 5.1 m j F T =150 C 6.3 6.8 m j SEMITRANS 3 I = 200 A I F T =150 C 230 A j RRM di/dt =5300A/s off Q T =150 C 30 C j rr V =15V GE E T =150 C 13 mJ rr j V = 600 V CC R per diode 0.26 K/W th(j-c) Module SKM200GB12V L 15 20 nH CE R T =25C 0.25 m CC +EE C terminal-chip T =125C 0.5 m C Features R per module 0.02 0.038 K/W th(c-s) V-IGBT = 6. Generation Trench V-IGBT M to heat sink M6 3 5 Nm s (Fuji) CAL4 = Soft switching 4. Generation M to terminals M6 2.5 5 Nm t CAL-diode Nm Isolated copper baseplate using DBC w 325 g technology (Direct Copper Bonding) UL recognized, file no. E63532 Increased power cycling capability With integrated gate resistor Low switching losses at high di/dt Typical Applications* AC inverter drives UPS Electronic welders Remarks Case temperature limited to T = 125C max, recomm. c T = -40 ... +150C, product op rel. results valid for T = 150 j GB 2 Rev. 5 17.06.2011 by SEMIKRON