SKM 25GD125D Semikron

SKM25GD125D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 1200 V CES j I T =25C 39 A C c T = 150 C j T =80C 27 A c I 25 A Cnom I I = 2xI 50 A CRM CRM Cnom V -20 ... 20 V GES V = 600 V CC SEMITRANS 6 t V 15 V T =125 C 10 s psc GE j V 1200 V CES T -55 ... 150 C j IGBT modules Inverse diode I T =25C 47 A F c T = 150 C j SKM25GD125D T =80C 32 A c I 40 A Fnom Target Data I I = 2xI 80 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 410 A FSM p j V with positive temperature CE(sat) T -40 ... 150 C j coefficient Module High short circuit capability, self limiting to 6 x Icnom I T =80 C 100 A terminal t(RMS) Fast & soft inverse CAL diodes T -40 ... 125 C stg Large clearance (10 mm) and V AC sinus 50 Hz, t = 1 min 4000 V isol creepage distances (20 mm) Isolated copper baseplate using DBC Characteristics Technology (Direct Copper Bonding) UL recognized, file no. E63532 Symbol Conditions min. typ. max. Unit Typical Applications* IGBT Three phase inverters for AC motor I =25A V C T =25C 3.20 3.70 V j CE(sat) speed control V =15V GE T =125 C 3.60 4.20 V j Pulse frequencies also above 15 kHz chiplevel DC servo and robot drives V T =25C 1.5 1.75 V CE0 j chiplevel T =125 C 1.7 1.95 V j r T =25C 68.00 78.00 m CE V =15V j GE chiplevel T =125 C 76.00 90.00 m j V V =V , I = 1 mA 4.5 5.5 6.5 V GE(th) GE CE C I T =25C 0.1 0.3 mA CES V =0V j GE V = 1200 V CE mA C f=1MHz 1.65 nF ies V =25V CE C f=1MHz 0.25 nF oes V =0V GE C f=1MHz 0.11 nF res Q V = - 8 V...+ 20 V 221 nC G GE R T =25C 0.00 Gint j V = 600 V t CC T =125 C 25 ns d(on) j I =25A C t T =125 C 19 ns r j V =15V GE E T =125 C 3.9 mJ on j R =16 G on t T =125 C 184 ns d(off) R =16 j G off t T =125 C 8ns f j E T =125 C 1.6 mJ off j R per IGBT 0.56 K/W th(j-c) GD by SEMIKRON Rev. 1 05.12.2012 1SKM25GD125D Characteristics Symbol Conditions min. typ. max. Unit Inverse diode I =40A V = V F T =25C 2.13 2.65 V F EC j V =0V GE T =125 C 1.94 2.46 V j chiplevel V T =25C 1.1 1.45 V j F0 chiplevel T =125 C 0.85 1.2 V j r T =25C 25.7 30.0 m j F chiplevel T =125 C 27.1 31.4 m j SEMITRANS 6 I =25A I F T =125 C 50 A j RRM di/dt =2500A/s off Q T =125 C 4C j rr V =15V GE E T =125 C 1.1 mJ rr j IGBT modules V = 600 V CC R per diode 1 K/W th(j-c) Module SKM25GD125D L 60 nH CE Target Data R T =25C m CC +EE C terminal-chip T =125C m C Features R per module 0.05 K/W th(c-s) V with positive temperature CE(sat) M to heat sink M6 4 5 Nm s coefficient High short circuit capability, self limiting M Nm t to 6 x Icnom Nm Fast & soft inverse CAL diodes w 175 g Large clearance (10 mm) and creepage distances (20 mm) Isolated copper baseplate using DBC Technology (Direct Copper Bonding) UL recognized, file no. E63532 Typical Applications* Three phase inverters for AC motor speed control Pulse frequencies also above 15 kHz DC servo and robot drives GD 2 Rev. 1 05.12.2012 by SEMIKRON