SKM600GB126D Semikron

SKM600GB126D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 1200 V CES j I T =25C 660 A C c T = 150 C j T =80C 461 A c I 400 A Cnom I I = 2xI 800 A CRM CRM Cnom V -20 ... 20 V GES V = 600 V CC SEMITRANS 3 t V 15 V T =125 C 10 s psc GE j V 1200 V CES T -40 ... 150 C j Trench IGBT Modules Inverse diode I T =25C 490 A F c T = 150 C j SKM600GB126D T =80C 337 A c I 400 A Fnom I I = 2xI 800 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 3312 A FSM p j Trench = Trenchgate technology T -40 ... 150 C j V with positive temperature CE(sat) Module coefficient High short circuit capability, self limiting I 500 A t(RMS) to 6 x I C T -40 ... 125 C stg UL recognized, file no. E63532 V AC sinus 50 Hz, t = 1 min 4000 V isol Typical Applications* Characteristics AC inverter drives Symbol Conditions min. typ. max. Unit UPS IGBT Electronic welders I =400A V C T =25C 1.70 2.12 V j CE(sat) V =15V GE Remarks T =125 C 2.02 2.46 V j chiplevel I 500A for T = 100 C DC Terminal V T =25C 11.2 V CE0 j chiplevel T =125 C 0.9 1.1 V j r T =25C 1.75 2.3 m CE V =15V j GE chiplevel T =125 C 2.8 3.4 m j V V =V , I =16 mA 5 5.8 6.5 V GE(th) GE CE C I T =25 C 5mA CES V =0 V j GE V = 1200 V CE T =125 C mA j C f=1MHz 28.8 nF ies V =25V CE C f=1MHz 1.51 nF oes V =0 V GE C f=1MHz 1.31 nF res Q V = - 8 V...+ 20 V 3600 nC G GE R T =25C 1.9 Gint j V = 600 V t CC T =125 C 290 ns d(on) j I =400A C t T =125 C 60 ns r j V = +15/-15 V GE E T =125 C 39 mJ on j R =2 G on t T =125 C 670 ns d(off) R =2 j G off t T =125 C 80 ns f j E T =125 C 64 mJ off j R per IGBT 0.055 K/W th(j-c) GB by SEMIKRON Rev. 1.0 20.07.2015 1SKM600GB126D Characteristics Symbol Conditions min. typ. max. Unit Inverse diode I = 400 A V = V F T =25C 1.60 1.80 V F EC j V =0V GE T =125 C 1.60 1.80 V j chiplevel V T =25C 11.1 V j F0 chiplevel T =125 C 0.8 0.9 V j r T =25C 1.50 1.75 m j F chiplevel T =125 C 2.00 2.3 m j SEMITRANS 3 I = 400 A I F T =125 C 475 A j RRM di/dt =7600A/s off Q T =125 C 96 C j rr V =-15V GE E T =125 C 41 mJ rr j Trench IGBT Modules V = 600 V CC R per diode 0.125 K/W th(j-c) Module SKM600GB126D L 15 nH CE R T =25C 0.35 m CC +EE C terminal-chip T =125 C 0.5 m C Features R per module 0.02 0.038 K/W th(c-s) Trench = Trenchgate technology M to heat sink M6 3 5 Nm s V with positive temperature CE(sat) coefficient M to terminals M6 2.5 5 Nm t High short circuit capability, self limiting Nm to 6 x I C w 325 g UL recognized, file no. E63532 Typical Applications* AC inverter drives UPS Electronic welders Remarks I 500A for T = 100 C DC Terminal GB 2 Rev. 1.0 20.07.2015 by SEMIKRON