/ Technical Information IGBT- F3L300R12PT4 B26 IGBT-modules EconoPACK4 (NPC2) pressfitNTC EconoPACK4 module with activeNeutral Point Clamp 2 topology and PressFIT / NTC / Preliminary Data VCES = 1200V I = 300A / I = 600A C nom CRM Typical Applications Solar Applications UPS UPS Systems Electrical Features T Extended Operation Temperature T vj op vj op Low Switching Losses VCEsat Low VCEsat IGBT4 Trench IGBT 4 T = 150C T = 150C vj op vj op V V with positive Temperature Coefficient CEsat CEsat Mechanical Features Isolated Base Plate Compact design PressFIT PressFIT Contact Technology Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MK date of publication: 2013-11-11 approved by: MK revision: 2.0 UL approved (E83335) 1 / Technical Information IGBT- F3L300R12PT4 B26 IGBT-modules Preliminary Data IGBT, T1 / T4 / IGBT, T1 / T4 / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 100C, T = 175C I 300 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 460 A t = 1 ms I 600 A P CRM Repetitive peak collector current T = 25C, T = 175C P 1650 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 300 A, V = 15 V T = 25C 1,75 2,15 V C GE vj Collector-emitter saturation voltage I = 300 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 300 A, V = 15 V T = 150C 2,10 V C GE vj I = 12,0 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 2,50 C Gate charge T = 25C R 2,5 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 18,5 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 1,00 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current () I = 300 A, V = 300 V T = 25C 0,21 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,23 s R = 1,5 T = 150C 0,24 s Gon vj () I = 300 A, V = 300 V T = 25C 0,09 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,10 s R = 1,5 T = 150C 0,11 s Gon vj () I = 300 A, V = 300 V T = 25C 0,38 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,46 s R = 1,5 T = 150C 0,48 s Goff vj () I = 300 A, V = 300 V T = 25C 0,07 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,10 s R = 1,5 T = 150C 0,11 s Goff vj () I = 300 A, V = 300 V, L = 35 nH T = 25C 7,80 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 2300 A/s (Tvj = 150C) Tvj = 125C Eon 11,5 mJ R = 1,5 T = 150C 12,5 mJ Gon vj ( I = 300 A, V = 300 V, L = 35 nH T = 25C 13,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 2300 V/s (Tvj = 150C)Tvj = 125C Eoff 19,0 mJ R = 1,5 T = 150C 20,5 mJ Goff vj V 15 V, V = 800 V t 10 s, T = 25C 1700 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 1400 A IGBT / per IGBT R 0,09 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,049 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-11-11 approved by: MK revision: 2.0 2