/ Technical Information IGBT- F3L75R07W2E3 B11 IGBT-modules EasyPACK /IGBT3 pressfitNTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC / Preliminary Data J VCES = 650V I = 75A / I = 150A C nom CRM Typical Applications 3-Level-Applications Solar Applications UPS UPS Systems Electrical Features 650V Increased blocking voltage capability to 650V Low inductive design Low Switching Losses V Low V CEsat CEsat Mechanical Features Al O Al O Substrate with Low Thermal Resistance 2 3 2 3 Compact design PressFIT PressFIT Contact Technology Rugged mounting due to integrated mounting clamps Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: DK date of publication: 2013-11-05 approved by: MB revision: 2.1 UL approved (E83335) 1 / Technical Information IGBT- F3L75R07W2E3 B11 IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 650 V vj CES Collector-emitter voltage T = 75C, T = 175C I 75 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 95 A t = 1 ms I 150 A P CRM Repetitive peak collector current T = 25C, T = 175C P 250 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 75 A, V = 15 V T = 25C 1,45 1,90 V C GE vj Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C V 1,60 V C GE vj CE sat I = 75 A, V = 15 V T = 150C 1,70 V C GE vj I = 1,20 mA, V = V , T = 25C V 4,9 5,8 6,5 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 0,80 C Gate charge T = 25C R 0,0 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 4,60 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,145 nF vj CE GE res Reverse transfer capacitance - VCE = 650 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 75 A, V = 300 V T = 25C 0,025 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,025 s R = 5,1 T = 150C 0,025 s Gon vj () I = 75 A, V = 300 V T = 25C 0,02 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,023 s R = 5,1 T = 150C 0,024 s Gon vj () I = 75 A, V = 300 V T = 25C 0,20 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,225 s R = 5,1 T = 150C 0,23 s Goff vj () I = 75 A, V = 300 V T = 25C 0,085 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,12 s R = 5,1 T = 150C 0,14 s Goff vj () I = 75 A, V = 300 V, L = 35 nH T = 25C 0,45 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3100 A/s (Tvj = 150C) Tvj = 125C Eon 0,60 mJ R = 5,1 T = 150C 0,70 mJ Gon vj ( I = 75 A, V = 300 V, L = 35 nH T = 25C 1,70 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 4000 V/s (Tvj = 150C)Tvj = 125C Eoff 2,30 mJ R = 5,1 T = 150C 2,40 mJ Goff vj V 15 V, V = 360 V t 8 s, T = 25C 530 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 6 s, Tvj = 150C 380 A IGBT / per IGBT R 0,55 0,60 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,55 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: DK date of publication: 2013-11-05 approved by: MB revision: 2.1 2