X-On Electronics has gained recognition as a prominent supplier of SKM400GB126D IGBT Modules across the USA, India, Europe, Australia, and various other global locations. SKM400GB126D IGBT Modules are a product manufactured by Semikron. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

SKM400GB126D Semikron

SKM400GB126D electronic component of Semikron
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See Product Specifications
Part No.SKM400GB126D
Manufacturer: Semikron
Category: IGBT Modules
Description: IGBT half-bridge; Urmax:1.2kV; Ic:327A; Ifsm:600A; SEMITRANS3
Datasheet: SKM400GB126D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 378.8236 ea
Line Total: USD 378.82 
Availability - 10
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 378.8236

   
Manufacturer
Product Category
Mounting
Case
Semiconductor Structure
Electrical Mounting
Topology
Version
Type Of Module
Max Forward Impulse Current
Collector Current
Max Off-State Voltage
Gate-Emitter Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SKM400GB126D from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SKM400GB126D and other electronic components in the IGBT Modules category and beyond.

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SKM400GB126D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 1200 V CES j I T =25C 470 A C c T = 150 C j T =80C 327 A c I 300 A Cnom I I = 2xI 600 A CRM CRM Cnom V -20 ... 20 V GES V = 600 V CC SEMITRANS 3 t V 15 V T =125 C 10 s psc GE j V 1200 V CES T -40 ... 150 C j Trench IGBT Modules Inverse diode I T =25C 352 A F c T = 150 C j SKM400GB126D T =80C 240 A c I 300 A Fnom I I = 2xI 600 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 2844 A FSM p j Trench = Trenchgate technology T -40 ... 150 C j V with positive temperature CE(sat) Module coefficient High short circuit capability, self limiting I 500 A t(RMS) to 6 x I C T -40 ... 125 C stg UL recognized, file no. E63532 V AC sinus 50 Hz, t = 1 min 4000 V isol Typical Applications* Characteristics AC inverter drives Symbol Conditions min. typ. max. Unit UPS IGBT Electronic welders I =300A V C T =25C 1.69 2.10 V j CE(sat) V =15V GE T =125 C 2.01 2.45 V j chiplevel V T =25C 11.2 V CE0 j chiplevel T =125 C 0.9 1.1 V j r T =25C 2.3 3 m CE V =15V j GE chiplevel T =125 C 3.7 4.5 m j V V =V , I =12 mA 5 5.8 6.5 V GE(th) GE CE C I T =25C 4mA CES V =0V j GE V = 1200 V CE T =125 C mA j C f=1MHz 21.4 nF ies V =25V CE C f=1MHz 1.12 nF oes V =0V GE C f=1MHz 0.97 nF res Q V = - 8 V...+ 20 V 2800 nC G GE R T =25C 2.5 Gint j V = 600 V t CC T =125 C 330 ns d(on) j I =300A C t T =125 C 50 ns r j V = +15/-15 V GE E T =125 C 29 mJ on j R =2 G on t T =125 C 650 ns d(off) R =2 j G off t T =125 C 110 ns f j E T =125 C 48 mJ off j R per IGBT 0.08 K/W th(j-c) GB by SEMIKRON Rev. 1.0 20.07.2015 1SKM400GB126D Characteristics Symbol Conditions min. typ. max. Unit Inverse diode I = 300 A V = V F T =25C 1.60 1.80 V F EC j V =0V GE T =125 C 1.60 1.80 V j chiplevel V T =25C 11.1 V j F0 chiplevel T =125 C 0.8 0.9 V j r T =25C 2.00 2.3 m j F chiplevel T =125 C 2.7 3 m j SEMITRANS 3 I = 300 A I F T =125 C 390 A j RRM di/dt =6300A/s off Q T =125 C 77 C j rr V =-15V GE E T =125 C 27 mJ rr j Trench IGBT Modules V = 600 V CC R per diode 0.18 K/W th(j-c) Module SKM400GB126D L 15 nH CE R T =25C 0.35 m CC +EE C terminal-chip T =125C 0.5 m C Features R per module 0.02 0.038 K/W th(c-s) Trench = Trenchgate technology M to heat sink M6 3 5 Nm s V with positive temperature CE(sat) coefficient M to terminals M6 2.5 5 Nm t High short circuit capability, self limiting Nm to 6 x I C w 325 g UL recognized, file no. E63532 Typical Applications* AC inverter drives UPS Electronic welders GB 2 Rev. 1.0 20.07.2015 by SEMIKRON

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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