SKM 50GD125D Semikron

SKM50GD125D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 1200 V CES j I T =25C 73 A C c T = 150 C j T =80C 50 A c I 50 A Cnom I I = 2xI 100 A CRM CRM Cnom V -20 ... 20 V GES V = 600 V CC SEMITRANS 6 t V 15 V T =125 C 10 s psc GE j V 1200 V CES T -55 ... 150 C j Inverse diode I T =25C 77 A F c T = 150 C j SKM50GD125D T =80C 53 A c I 55 A Fnom I I = 2xI 110 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 720 A FSM p j V with positive temperature CE(sat) T -40 ... 150 C j coefficient Module High short circuit capability, self limiting to 6 x Icnom I T =80 C 100 A terminal t(RMS) Fast & soft inverse CAL diodes T -40 ... 125 C stg Large clearance (10 mm) and V AC sinus 50 Hz, t = 1 min 4000 V isol creepage distances (20 mm) Isolated copper baseplate using DBC Characteristics Technology (Direct Copper Bonding) UL recognized, file no. E63532 Symbol Conditions min. typ. max. Unit Typical Applications* IGBT Three phase inverters for AC motor I =50A V C T =25C 3.20 3.70 V j CE(sat) speed control V =15V GE T =125 C 3.60 4.20 V j Pulse frequencies also above 15 kHz chiplevel DC servo and robot drives V T =25C 1.5 1.75 V CE0 j chiplevel T =125 C 1.7 1.95 V j r T =25C 34.00 39.00 m CE V =15V j GE chiplevel T =125 C 38.00 45.00 m j V V =V , I = 2 mA 4.5 5.5 6.5 V GE(th) GE CE C I T =25C 0.1 0.3 mA CES V =0V j GE V = 1200 V CE mA C f=1MHz 3.3 nF ies V =25V CE C f=1MHz 0.50 nF oes V =0V GE C f=1MHz 0.22 nF res Q V = - 8 V...+ 20 V 442 nC G GE R T =25C 0.00 Gint j V = 600 V t CC T =125 C 25 ns d(on) j I =50A C t T =125 C 19 ns r j V =15V GE E T =125 C 8mJ on j R =8 G on t T =125 C 184 ns d(off) R =8 j G off t T =125 C 8ns f j E T =125 C 3.2 mJ off j R per IGBT 0.32 K/W th(j-c) GD by SEMIKRON Rev. 2 05.12.2012 1SKM50GD125D Characteristics Symbol Conditions min. typ. max. Unit Inverse diode I =55A V = V F T =25C 2.00 2.50 V F EC j V =0V GE T =125 C 1.80 2.30 V j chiplevel V T =25C 1.1 1.45 V j F0 chiplevel T =125 C 0.85 1.2 V j r T =25C 16.4 19.1 m j F chiplevel T =125 C 17.3 20.0 m j SEMITRANS 6 I =50A I F T =125 C 75 A j RRM di/dt =3200A/s off Q T =125 C 7C j rr V =15V GE E T =125 C 2.1 mJ rr j V = 600 V CC R per diode 0.6 K/W th(j-c) Module SKM50GD125D L 60 nH CE R T =25C m CC +EE C terminal-chip T =125C m C Features R per module 0.05 K/W th(c-s) V with positive temperature CE(sat) M to heat sink M6 4 5 Nm s coefficient High short circuit capability, self limiting M Nm t to 6 x Icnom Nm Fast & soft inverse CAL diodes w 175 g Large clearance (10 mm) and creepage distances (20 mm) Isolated copper baseplate using DBC Technology (Direct Copper Bonding) UL recognized, file no. E63532 Typical Applications* Three phase inverters for AC motor speed control Pulse frequencies also above 15 kHz DC servo and robot drives GD 2 Rev. 2 05.12.2012 by SEMIKRON