VS-GB75YF120N www.vishay.com Vishay Semiconductors IGBT 4 Pack Module, 75 A FEATURES Square RBSOA HEXFRED low Q , low switching energy rr Positive V temperature coefficient CE(on) Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 Material categorization: for definitions of compliance ECONO 2 please see www.vishay.com/doc 99912 BENEFITS PRIMARY CHARACTERISTICS Benchmark efficiency for SMPS appreciation in particular V 1200 V HF welding CES I at T = 67 C 75 A C C Rugged transient performance V (typical) 3.4 V CE(on) Low EMI, requires less snubbing Speed 8 kHz to 30 kHz Direct mounting to heatsink space saving Package ECONO 2 PCB solderable terminals Circuit configuration 4 pack Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX.UNITS Collector to emitter voltage V 1200 V CES T = 25 C 100 C Continuous collector current I C T = 80 C 67 C Pulsed collector current I 200 CM See fig. C.T.5 A Clamped inductive load current I 200 LM T = 25 C 40 C Diode continuous forward current I F T = 80 C 25 C Diode maximum forward current I 150 FM Gate to emitter voltage V 20 V GE T = 25 C 480 C Maximum power dissipation (IGBT) P W D T = 80 C 270 C Maximum operating junction temperature T 150 J C Storage temperature range T -40 to +125 Stg Isolation voltage V AC 2500 (min) V ISOL Revision: 20-Sep-17 Document Number: 93654 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-GB75YF120N www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 500 A 1200 - - BR(CES) GE C I = 75 A, V = 15 V - 3.4 4.0 C GE I = 100 A, V = 15 V - 3.8 4.5 C GE Collector to emitter voltage V V CE(ON) I = 75 A, V = 15 V, T = 125 C - 4.0 4.5 C GE J I = 100 A, V = 15 V, T = 125 C - 4.53 5.1 C GE J Gate threshold voltage V V = V , I = 250 A 4.0 5.0 6.0 GE(th) CE GE C Threshold voltage temperature coefficient V /T V = V , I = 1 mA (25 C to 125 C) - -11 - mV/C GE(th) J CE GE C V = 0 V, V = 1200 V - 7 250 GE CE Zero gate voltage collector current I A CES V = 0 V, V = 1200 V, T = 125 C - 580 2000 GE CE J I = 75 A - 3.9 5.0 F I = 100 A - 4.43 5.8 F Diode forward voltage drop V V FM I = 75 A, T = 125 C - 4.37 5.4 F J I = 100 A, T = 125 C - 5.02 6.4 F J Gate to emitter leakage current I V = 20 V - - 200 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q - 630 - G I = 500 A C Gate to emitter charge (turn-on) Q V = 600 V -65 - nC GE CC V = 15 V GE Gate to collector charge (turn-on) Q - 250 - GC Turn-on switching loss E -1.51 - on I = 50 A, V = 600 V C CC Turn-off switching loss E V = 15 V, R = 4.7 , L = 500 H -2.41 - off GE G (1) T = 25 C J Total switching loss E -3.92 - tot mJ Turn-on switching loss E -2.25 - on I = 50 A, V = 600 V C CC Turn-off switching loss E V = 15 V, R = 4.7 , L = 500 H -3.35 - off GE G (1) T = 125 C J Total switching loss E -7.60 - tot Turn-on delay time t - 169 - d(on) I = 50 A, V = 600 V C CC Rise time t -71 - r V = 15 V, R = 4.7 , L = 500 H ns GE G Turn-off delay time t - 393 - d(off) T = 125 C J Fall time t - 136 - f T = 150 C, I = 150 A J C Reverse bias safe operating area RBSOA Fullsquare R = 10 , V = 15 V to 0 V G GE T = 150 C J Short circuit safe operating area SCSOA V = 900 V, V = 1200 V 10 - - s CC P R = 10 , V = 15 V to 0 V G GE T = 25 C - 1.45 2.5 J Diode peak reverse recovery current I A rr T = 125 C - 2.35 4.0 J V = 600 V CC T = 25 C - 0.401 0.5 J Diode reverse recovery time t I = 75 A s rr F T = 125 C - 0.655 0.8 J dI/dt = 10 A/s T = 25 C - 0.181 0.4 J Total reverse recovery charge Q C rr T = 125 C - 0.54 1.5 J Note (1) Energy losses include tail and diode reverse recovery THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOLMIN.TYP. MAX. UNITS Junction to case IGBT R (IGBT) - - 0.26 thJC Junction to case DIODE R (DIODE) - - 1.00 C/W thJC Case to sink, flat, greased surface R (MODULE) - 0.05 - thCS Revision: 20-Sep-17 Document Number: 93654 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000