VS-GA100TS60SFPbF www.vishay.com Vishay Semiconductors Half-Bridge IGBT INT-A-PAK, (Standard Speed IGBT), 100 A FEATURES Standard speed PT IGBT technology Optimized for hard switching speed FRED Pt antiparallel diodes with fast recovery Very low conduction losses Al O DBC 2 3 UL approved file E78996 Designed for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 INT-A-PAK BENEFITS Optimized for high current inverter stages (AC TIG welding PRIMARY CHARACTERISTICS machines) V 600 V CES Direct mounting to heatsink I DC 220 A C Very low junction to case thermal resistance V at 100 A, 25 C 1.11 V CE(on) Speed DC to 1 kHz Low EMI Package INT-A-PAK Circuit configuration Half bridge ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Collector to emitter voltage V 600 V CES T = 25 C 220 C Continuous collector current I C T = 130 C 100 C A Pulsed collector current I 440 CM Peak switching current I 440 LM Gate to emitter voltage V 20 GE V RMS isolation voltage V Any terminal to case, t = 1 min 2500 ISOL T = 25 C 780 C Maximum power dissipation P W D T = 100 C 312 C Operating junction temperature range T -40 to +150 J C Storage temperature range T -40 to +125 Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 1 mA 600 - - BR(CES) GE C V = 15 V, I = 100 A - 1.11 1.28 GE C Collector to emitter voltage V I = 200 A - 1.39 - V CE(on) C V = 15 V, I = 100 A, T = 125 C - 1.08 1.22 GE C J Gate threshold voltage V I = 0.25 mA 3 - 6 GE(th) C V = 0 V, V = 600 V - - 1 GE CE Collector to emitter leakage current I mA CES V = 0 V, V = 600 V, T = 125 C - - 10 GE CE J I = 100 A, V = 0 V - 1.44 1.96 C GE Diode forward voltage drop V V FM I = 100 A, V = 0 V, T = 125 C - 1.25 1.54 C GE J Gate to emitter leakage current I V = 20 V - - 250 nA GES GE Revision: 06-Oct-17 Document Number: 94544 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-GA100TS60SFPbF www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge Q - 640 700 g I = 100 A C Gate to emitter charge Q V = 400 V - 108 120 nC ge CC V = 15 V GE Gate to collector charge Q - 230 300 gc Rise time t -0.45 - r I = 100 A s C Fall time t -1.0 - f V = 480 V CC Turn-on switching energy E V = 15 V -4 6 on GE R = 15 g Turn-off switching energy E -23 29 off T = 25 C J Total switching energy E -27 35 ts mJ Turn-on switching energy E -6 12 on I = 100 A, V = 480 V C CC Turn-off switching energy E V = 15 V, R = 15 -35 40 off GE g T = 125 C J Total switching energy E -41 52 ts Input capacitance C - 16 250 - ies V = 0 V GE Output capacitance C V = 30 V - 1040 - pF oes CC f = 1.0 MHz Reverse transfer capacitance C - 190 - res Diode reverse recovery time t -91 155 ns rr I = 50 A F Diode peak reverse current I dI /dt = 200 A/s - 10.6 15 A rr F V = 200 V rr Diode recovery charge Q - 500 900 nC rr Diode reverse recovery time t - 180 344 ns rr I = 50 A F Diode peak reverse current I dI /dt = 200 A/s - 17 20.5 A rr F V = 200 V, T = 125 C rr J Diode recovery charge Q - 1633 2315 nC rr THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Operating junction temperature range T -40 - 150 J C Storage temperature range T -40 - 125 Stg per switch - - 0.16 Junction to case R thJC per diode - - 0.48 C/W Case to sink per module R -0.1 - thCS case to heatsink - - 4 Mounting torque Nm case to terminal 1, 2, 3 - - 3 Weight -185 - g 1000 1000 V = 15 V GE T = 125 C J 100 T = 25 C J 100 10 T = 25 C J T = 125 C J V = 10 V CE 380 s PULSE WIDTH 1 10 0.6 0.8 1 1.2 1.4 1.6 1.8 5.5 6.5 7.5 8.5 V - Collector-to-Emitter Voltage (V) V -Gate-to-Emitter Voltage (V) CE GE Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics Revision: 06-Oct-17 Document Number: 94544 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Collector-to-Emitter Current (A) C I - Collector-to-Emitter Current (A) C