APTGT100TL60T3G Microchip

APTGT100TL60T3G Three level inverter V = 600V CES Trench + Field Stop IGBT3 I = 100A Tc = 80C C Power Module Application Solar converter Uninterruptible Power Supplies Features Trench + Field Stop IGBT3 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant All multiple inputs and outputs must be shorted together Example: 10/11/12 7/8 All ratings T = 25C unless otherwise specified j Q1 to Q4 Absolute maximum ratings (per IGBT) Symbol Parameter Max ratings Unit V Collector - Emitter Voltage 600 V CES T = 25C C 150 I Continuous Collector Current C A T = 80C 100 C I Pulsed Collector Current T = 25C 200 CM C V Gate Emitter Voltage 20 V GE T = 25C P Power Dissipation C 340 W D RBSOA Reverse Bias Safe Operating Area T = 150C 200A 550V j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 1-8 www.microsemi.com APTGT100TL60T3G Rev 2 November, 2017 APTGT100TL60T3G Q1 to Q4 Electrical Characteristics (per IGBT) Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 600V 250 A CES GE CE T = 25C j 1.5 1.9 V =15V GE V Collector Emitter Saturation Voltage V CE(sat) I = 100A C T = 150C j 1.7 V Gate Threshold Voltage V = V , I = 1.5 mA 5.0 5.8 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 400 nA GES GE CE Q1 to Q4 Dynamic Characteristics (per IGBT) Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 6100 ies GE V = 25V C Output Capacitance CE 390 pF oes f = 1MHz C Reverse Transfer Capacitance 190 res V =15V, I =100A GE C Q Gate charge 1.1 C G V =300V CE T Turn-on Delay Time Inductive Switching (25C) 115 d(on) V = 15V GE T Rise Time 45 r V = 300V ns Bus T Turn-off Delay Time 225 d(off) I = 100A C T Fall Time 55 f R = 3.3 G T Turn-on Delay Time Inductive Switching (150C) 130 d(on) V = 15V GE T Rise Time 50 r V = 300V ns Bus T Turn-off Delay Time 300 d(off) I = 100A C T Fall Time 70 f R = 3.3 G V = 15V GE E Turn on Energy T = 150C 0.875 mJ on j V = 300V Bus I = 100A C E Turn off Energy T = 150C 3.5 mJ off j R = 3.3 G V 15V V = 360V GE Bus I Short Circuit data 500 A sc t 6s T = 150C p j R Junction to Case Thermal Resistance 0.44 C/W thJC CR1 to CR4 diode ratings and characteristics (per diode) Symbol Characteristic Test Conditions Min Typ Max Unit V Peak Repetitive Reverse Voltage 600 V RRM I Reverse Leakage Current V =600V 150 A RM R I DC Forward current Tc = 80C 75 A F I = 75A T = 25C 1.6 2 F j V Diode Forward Voltage F V = 0V GE T = 150C 1.5 V j T = 25C 100 j t Reverse Recovery Time ns rr T = 150C 150 j I = 75A F T = 25C 3.6 j V = 300V Q Reverse Recovery Charge R C rr T = 150C 7.6 di/dt =2000A/s j T = 25C 0.85 j E Reverse Recovery Energy mJ rr T = 150C 1.8 j R Junction to Case Thermal Resistance 0.98 C/W thJC 2-8 www.microsemi.com APTGT100TL60T3G Rev 2 November, 2017