APTGL60DDA120T3G Microchip

APTGL60DDA120T3G Dual Boost chopper V = 1200V CES Trench + Field Stop IGBT4 I = 60A Tc = 80C C Power module Application 13 14 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 CR2 Features Trench + Field Stop IGBT 4 22 7 - Low voltage drop - Low leakage current 23 8 - Low switching losses Q1 Q2 - Low leakage current 26 4 - RBSOA and SCSOA rated Kelvin emitter for easy drive 27 3 Very low stray inductance Internal thermistor for temperature monitoring 29 30 31 32 Benefits 15 16 R1 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Easy paralleling due to positive TC of VCEsat Each leg can be easily paralleled to achieve a single boost of twice the current capability RoHS c-ompliant All multiple inputs and outputs must be shorted together Example: 13/14 29/30 22/23 All ratings T = 25C unless otherwise specified j Absolute maximum ratings (per IGBT) Symbol Parameter Max ratings Unit V Collector - Emitter Voltage 1200 V CES T = 25C C 80 I Continuous Collector Current C A T = 80C 60 C I Pulsed Collector Current T = 25C 100 CM C V Gate Emitter Voltage 20 V GE P Power Dissipation T = 25C 280 W D C RBSOA Reverse Bias Safe Operating Area T = 150C 100A 1100V j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 1-6 www.microsemi.com APTGL60DDA120T3G Rev 2 November, 2017 APTGL60DDA120T3G Electrical Characteristics (per IGBT) Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 1200V 250 A CES GE CE T = 25C 1.85 2.25 V = 15V j GE V Collector Emitter saturation Voltage V CE(sat) I = 50A C T = 150C 2.25 j V Gate Threshold Voltage V = V , I = 1.6mA 5.0 5.8 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 400 nA GES GE CE Dynamic Characteristics (per IGBT) Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 2770 ies V = 0V GE C Output Capacitance V = 25V 205 pF oes CE f = 1MHz C Reverse Transfer Capacitance 160 res V = 15V V =600V GE CE Q Gate charge 0.38 C G I =50A C Inductive Switching (25C) T Turn-on Delay Time 130 d(on) V = 15V GE T Rise Time 20 r V = 600V ns CE T Turn-off Delay Time 300 d(off) I = 50A C T Fall Time 45 f R = 8.2 G Inductive Switching (150C) T Turn-on Delay Time 150 d(on) V = 15V GE T Rise Time 35 r V = 600V ns CE T Turn-off Delay Time 350 d(off) I = 50A C T Fall Time R = 8.2 80 f G T = 25C 3.8 J V = 15V GE E Turn-on Switching Energy mJ on V = 600V T = 150C 5.5 CE J I = 50A C T = 25C 2.5 J E Turn-off Switching Energy mJ off R = 8.2 G T = 150C 4.5 J V 15V V = 900V GE Bus I Short Circuit data 200 A sc t 10s T = 150C p j R Junction to Case Thermal Resistance 0.53 C/W thJC Chopper diode ratings and characteristics (per diode) Symbol Characteristic Test Conditions Min Typ Max Unit V Peak Repetitive Reverse Voltage 1200 V RRM I Reverse Leakage Current V =1200V 100 A RM R I DC Forward Current Tc = 80C 60 A F I = 60A 2.5 3 F I = 120A 3 V Diode Forward Voltage F V F I = 60A T = 125C F j 1.8 T = 25C 265 j t Reverse Recovery Time ns rr I = 60A F T = 125C 350 j V = 800V R T = 25C 560 j di/dt =200A/s Q Reverse Recovery Charge nC rr T = 125C 2890 j R Junction to Case Thermal Resistance 0.9 C/W thJC 2-6 www.microsemi.com APTGL60DDA120T3G Rev 2 November, 2017