TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 1200V APT75GP120JDQ3 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.UL Recognize file E145592 ISOTOP Low Conduction Loss 50 kHz operation 800V, 20A Low Gate Charge 20 kHz operation 800V, 44A C Ultrafast Tail Current shutoff RBSOA Rated G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Symbol Parameter UNIT APT75GP120JDQ3 V Collector-Emitter Voltage 1200 CES Volts V Gate-Emitter Voltage 20 GE I Continuous Collector Current T = 25C 128 C1 C I Continuous Collector Current T = 110C 57 Amps C2 C 1 I Pulsed Collector Current T = 150C 300 CM C Reverse Bias Safe Operating Area T = 150C RBSOA 300A 960V J P Total Power Dissipation Watts 543 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 1250A) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 2.5mA, T = 25C) GE(TH) 3 4.5 6 CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 75A, T = 25C) 3.3 3.9 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 75A, T = 125C) 3.0 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 1250 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) 5500 CE GE j I Gate-Emitter Leakage Current (V = 20V) nA GES 100 GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT75GP120JDQ3 Symbol Characteristic Test Conditions MIN TYP MAX UNIT C 7035 Input Capacitance Capacitance ies C pF 460 Output Capacitance V = 0V, V = 25V oes GE CE C f = 1 MHz 80 Reverse Transfer Capacitance res V V Gate-to-Emitter Plateau Voltage Gate Charge 7.5 GEP 3 Q V = 15V Total Gate Charge 320 g GE V = 600V Q nC Gate-Emitter Charge 50 CE ge I = 75A Q C 140 Gate-Collector Mille) Charge gc T = 150C, R = 5, V = J G GE Reverse Bias Safe Operating Area RBSOA A 300 15V, L = 100H,V = 960V CE t Inductive Switching (25C) Turn-on Delay Time d(on) 20 V = 600V t Current Rise Time 40 CC r ns t V = 15V Turn-off Delay Time d(off) GE 165 I = 75A t C Current Fall Time 55 f R = 5 4 G E Turn-on Switching Energy 1620 on1 T = +25C 5 J E J Turn-on Switching Energy (Diode) 4100 on2 6 E Turn-off Switching Energy 2500 off t Inductive Switching (125C) Turn-on Delay Time d(on) 20 t V = 600V Current Rise Time 40 r CC ns V = 15V t Turn-off Delay Time GE d(off) 245 I = 75A t C Current Fall Time f 115 R = 5 4 4 G E Turn-on Switching Energy 1620 on1 T = +125C 55 J E J Turn-on Switching Energy (Diode) 5850 on2 6 E Turn-off Switching Energy 4820 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .23 JC C/W R Junction to Case (DIODE) .56 JC W gm Package Weight 29.2 T V RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Volts 2500 Isolation 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure 24.) 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reserves the right to change, without notice, the specications and information contained herein. 050-7458 Rev A 10-2005