APT77N60JC3 600V 77A 0.035 Super Junction MOSFET Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche Energy RatedUL Recognize file E145592 IS OTO P dv Extreme / Rated dt D Dual die (parallel) G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. S MAXIMUM RATINGS All Ratings per die: T = 25C unless otherwise speci ed. C Symbol Parameter APT77N60JC3 UNIT Drain-Source Voltage 600 Volts V DSS 1 77 I Continuous Drain Current T = 25C D C Amps 2 231 I Pulsed Drain Current DM Gate-Source Voltage Continuous 20 Volts V GS Gate-Source Voltage Transient 30 V GSM 568 Watts Total Power Dissipation T = 25C C P D Linear Derating Factor 4.55 W/C Operating and Storage Junction Temperature Range -55 - to 150 T ,T J STG C Lead Temperature: 0.063 from Case for 10 Sec. 300 T L dv / Drain-Source Voltage slope (V = 400V, I = 77A, T = 125C) 50 V/ns dt DS D J 2 20 Amps I Avalanche Current AR 3 1 E Repetitive Avalanche Energy AR mJ 180 E Single Pulse Avalanche Energy AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT 600 Volts BV Drain-Source Breakdown Voltage (V = 0V, I = 500 A) (DSS) GS D 4 .030 0.035 Ohms R Drain-Source On-State Resistance (V = 10V, I = 70A) DS(on) GS D 1.0 50 Zero Gate Voltage Drain Current (V = 650V, V = 0V) DS GS A I DSS 500 Zero Gate Voltage Drain Current (V = 650V, V = 0V, T = 150C) DS GS C 200 nA I Gate-Source Leakage Current (V = 20V, V = 0V) GSS GS DS 2.1 3 3.9 Volts V Gate Threshold Voltage (V = V , I = 5.92mA) GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. COOLMOS comprise a new family of transistors developed by In neon Technologies AG. COOLMO is a trade- mark of In neon Technologies A Microsemi Website - DYNAMIC CHARACTERISTICS APT77N60JC3 Test Conditions Characteristic MIN TYP MAX Symbol UNIT C Input Capacitance 13600 iss V = 0V GS C Output Capacitance 4400 V = 25V oss DS pF f = 1 MHz C Reverse Transfer Capacitance 290 rss 3 Q V = 10V 505 640 Total Gate Charge g GS V = 300V Q Gate-Source Charge DD 48 gs nC I = 77A 25C D Q Gate-Drain Mille) Charge 240 gd RESISTIVE SWITCHING t Turn-on Delay Time 18 d(on) V = 10V GS t Rise Time 27 r V = 380V DD ns I = 77A 125C t 110 165 Turn-off Delay Time D d(off) R = 0.9 G t Fall Time 8 12 f INDUCTIVE SWITCHING 25C 6 E 1670 Turn-on Switching Energy on V = 400V, V = 15V DD GS I = 77A, R = 5 E 2880 Turn-off Switching Energy D G off INDUCTIVE SWITCHING 125C J 6 E 2300 Turn-on Switching Energy on V = 400V, V = 15V DD GS I = 77A, R = 5 E Turn-off Switching Energy 3100 D G off SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I 77 Continuous Source Current (Body Diode) S Amps 1 I 231 Pulsed Source Current (Body Diode) SM 2 V 1 1.2 Volts Diode Forward Voltage (V = 0V, I = -77A) SD GS S t 861 ns Reverse Recovery Time (I = -77A, dl /dt = 100A/s, V = 350V) rr S S R C Q 46 Reverse Recovery Charge (I = -77A, dl /dt = 100A/s, V = 350V) rr S S R dv dv 5 V/ns / 6 Peak Diode Recovery / dt dt THERMAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case 0.22 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 36.0mH, R = 25 , Peak I = 10A j G L dv temperature 5 / numbers re ect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 77A / 700A/ s V V T 150C S D R DSS J dt 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See gures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as P =E *f AV AR Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 0.25 0.9 0.20 0.7 0.15 0.5 Note: 0.10 t 1 0.3 t 2 0.05 SINGLE PULSE t 0.1 1 t Duty Factor D = / 2 0.05 Peak T = P x Z + T J DM JC C 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7146 Rev H 3-2012 Z , THERMAL IMPEDANCE (C/W) JC P DM