APTC60AM35SCTG V = 600V DSS Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module R = 35m max Tj = 25C DSon I = 72A Tc = 25C D NTC2 Application VBUS Motor control Switched Mode Power Supplies Q1 Uninterruptible Power Supplies Features G1 CoolMOS OUT - Ultra low R DSon S1 - Low Miller capacitance Q2 - Ultra low gate charge - Avalanche energy rated G2 Parallel SiC Schottky Diode - Zero reverse recovery 0/VBUS S2 - Zero forward recovery NTC1 - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant All ratings T = 25C unless otherwise specified j Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 600 V DSS T = 25C 72 c I Continuous Drain Current D T = 80C 54 A c I Pulsed Drain current 288 DM V Gate - Source Voltage 30 V GS R Drain - Source ON Resistance 35 DSon m P Maximum Power Dissipation T = 25C 416 W D c I Avalanche current (repetitive and non repetitive) 20 A AR E Repetitive Avalanche Energy 1 AR mJ E Single Pulse Avalanche Energy 1800 AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 9 www.microsemi.com APTC60AM35SCTG Rev 6 September, 2014 APTC60AM35SCTG Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = 0V,V = 600V T = 25C 50 GS DS j I Zero Gate Voltage Drain Current A DSS V = 0V,V = 600V T = 125C 500 GS DS j R Drain Source on Resistance V = 10V, I = 36A 35 m DS(on) GS D V Gate Threshold Voltage V = V , I = 2mA 2.1 3 3.9 V GS(th) GS DS D I Gate Source Leakage Current V = 20 V, V = 0V 150 nA GSS GS DS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 14 iss V = 0V GS C Output Capacitance V = 25V 5.13 nF oss DS f = 1MHz C Reverse Transfer Capacitance 0.42 rss Q Total gate Charge 518 g V = 10V GS Q Gate Source Charge 58 gs V = 300V nC Bus I = 72A D Q Gate Drain Charge 222 gd T Turn-on Delay Time 21 d(on) Inductive switching 125C V = 15V GS T Rise Time 30 r V = 400V ns Bus T Turn-off Delay Time 283 d(off) I = 72A D T Fall Time R = 2.5 84 G f Inductive switching 25C E Turn-on Switching Energy 804 on V = 15V, V = 400V J GS Bus E Turn-off Switching Energy 1960 off I = 72A, R = 2.5 D G Inductive switching 125C E Turn-on Switching Energy 1315 on V = 15V, V = 400V J GS Bus E Turn-off Switching Energy 2412 off I = 72A, R = 2.5 D G R Junction to Case Thermal Resistance 0.3 C/W thJC Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Peak Repetitive Reverse Voltage 600 V RRM I Reverse Leakage Current V=600V 150 A RM R I DC Forward current Tc = 80C 100 A F I = 100A T = 25C 1.6 2 F j V Diode Forward Voltage V F V = 0V T = 150C 1.5 GE j T = 25C 100 j t Reverse Recovery Time ns rr T = 150C 150 j I = 100A F T = 25C 5.1 j V = 300V Q Reverse Recovery Charge R C rr T = 150C 10.7 di/dt =2500A/s j T = 25C 1.2 j E Reverse Recovery Energy mJ rr T = 150C 2.4 j R Junction to Case Thermal Resistance 0.71 C/W thJC 2 9 www.microsemi.com APTC60AM35SCTG Rev 6 September, 2014