APTC60DDAM70T1G V = 600V DSS Dual boost chopper R = 70m max Tj = 25C DSon Super Junction MOSFET I = 39A Tc = 25C D Power Module Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features - Ultra low R DSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Each leg can be easily paralleled to achieve a single boost of twice the current capability Low profile RoHS Compliant Pins 3/4 must be shorted together Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 600 V DSS T = 25C 39 c I Continuous Drain Current D A T = 80C 29 c I Pulsed Drain current 160 DM V Gate - Source Voltage 20 V GS R Drain - Source ON Resistance 70 DSon m P Maximum Power Dissipation T = 25C 250 W D c I Avalanche current (repetitive and non repetitive) 20 A AR E Repetitive Avalanche Energy 1 AR mJ E Single Pulse Avalanche Energy 1800 AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 8 www.microsemi.com APTC60DDAM70T1G Rev 2 October, 2012 APTC60DDAM70T1G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = 0V,V = 600V T = 25C 25 GS DS j I Zero Gate Voltage Drain Current A DSS V = 0V,V = 600V T = 125C 250 GS DS j R Drain Source on Resistance V = 10V, I = 39A 70 m DS(on) GS D V Gate Threshold Voltage V = V , I = 2.7mA 2.1 3 3.9 V GS(th) GS DS D I Gate Source Leakage Current V = 20 V, V = 0V 100 nA GSS GS DS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 7 V = 0V iss GS V = 25V nF C Output Capacitance 2.56 oss DS f = 1MHz C Reverse Transfer Capacitance 0.21 rss Q Total gate Charge 259 g V = 10V GS Q Gate Source Charge V = 300V 29 nC Bus gs I = 39A D Q Gate Drain Charge 111 gd T Turn-on Delay Time 21 Inductive Switching 125C d(on) V = 15V GS T Rise Time 30 r V = 400V ns Bus T Turn-off Delay Time 283 d(off) I = 39A D R = 5 T Fall Time G 84 f Inductive switching 25C E Turn-on Switching Energy 670 on J V = 15V, V = 400V GS Bus E Turn-off Switching Energy 980 off I = 39A, R = 5 D G Inductive switching 125C E Turn-on Switching Energy 1096 on J V = 15V, V = 400V GS Bus E Turn-off Switching Energy 1206 off I = 39A, R = 5 D G Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Maximum Peak Repetitive Reverse Voltage V 600 V RRM T = 25C 25 j I Maximum Reverse Leakage Current V =600V A RM R T = 125C 500 j I DC Forward Current Tc = 80C 30 A F I = 30A 1.8 2.2 F V Diode Forward Voltage V I = 60A 2.2 F F T = 125C I = 30A j 1.5 F T = 25C 25 j t Reverse Recovery Time ns rr I = 30A F T = 125C 160 j V = 400V R di/dt =200A/s T = 25C 35 j Q Reverse Recovery Charge nC rr T = 125C 480 j 2 8 www.microsemi.com APTC60DDAM70T1G Rev 2 October, 2012