APTGT100A60T1G Microchip

APTGT100A60T1G Phase leg V = 600V CES Trench + Field Stop IGBT3 I = 100A* Tc = 80C C Power Module Application 56 11 Welding converters Switched Mode Power Supplies Q1 Uninterruptible Power Supplies CR1 Motor control 7 Features 8 3 Trench + Field Stop IGBT3 Technology NTC 4 - Low voltage drop Q2 - Low tail current CR2 - Switching frequency up to 20 kHz 9 - Soft recovery parallel diodes - Low diode VF 10 - Low leakage current - RBSOA and SCSOA rated 12 1 2 Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 1/2 3/4 5/6 must be shorted together Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 600 V CES T = 25C 150 * C I Continuous Collector Current C T = 80C 100 * A C I Pulsed Collector Current T = 25C 200 CM C V Gate Emitter Voltage 20 V GE T = 25C P Maximum Power Dissipation 340 W C D RBSOA Reverse Bias Safe Operating Area T = 150C 200A 550V j * Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 6 www.microsemi.com APTGT100A60T1G Rev 1 October, 2012 APTGT100A60T1G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 600V 250 A CES GE CE T = 25C V =15V j 1.5 1.9 GE V Collector Emitter Saturation Voltage V CE(sat) I = 100A T = 150C C 1.7 j V Gate Threshold Voltage V = V , I = 1.5 mA 5.0 5.8 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 400 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 6100 ies GE V = 25V pF C Output Capacitance CE 390 oes f = 1MHz C Reverse Transfer Capacitance 190 res Inductive Switching (25C) T Turn-on Delay Time 115 d(on) V = 15V GE T Rise Time 45 r V = 300V ns Bus T Turn-off Delay Time 225 d(off) I = 100A C T Fall Time 55 f R = 3.3 G Inductive Switching (150C) T Turn-on Delay Time 130 d(on) V = 15V GE T Rise Time 50 r ns V = 300V Bus T Turn-off Delay Time 300 d(off) I = 100A C T Fall Time 70 f R = 3.3 G T = 25C 0.4 j V = 15V GE E Turn on Energy mJ on T = 150C j 0.875 V = 300V Bus I = 100A C T = 25C j 2.5 E Turn off Energy mJ off R = 3.3 G T = 150C 3.5 j Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 600 V RRM T = 25C 250 j I Maximum Reverse Leakage Current V =600V A RM R T = 150C 500 j I DC Forward Current Tc = 80C 100 A F I = 100A T = 25C 1.6 2 F j V Diode Forward Voltage V F V = 0V GE T = 150C 1.5 j T = 25C 125 j t Reverse Recovery Time ns rr T = 150C 220 j I = 100A F T = 25C 4.7 j Q Reverse Recovery Charge V = 300V C rr R T = 150C 9.9 j di/dt =2000A/s T = 25C 1.1 j E Reverse Recovery Energy mJ r T = 150C 2.4 j 2 6 www.microsemi.com APTGT100A60T1G Rev 1 October, 2012