APTGT150A120TG Microchip

APTGT150A120TG Phase leg V = 1200V CES Fast Trench + Field Stop IGBT3 I = 150A Tc = 80C C Power Module Application Welding converters VBUS NTC2 Switched Mode Power Supplies Uninterruptible Power Supplies Q1 Motor control G1 Features Fast Trench + Field Stop IGBT3 Technology E1 - Low voltage drop OUT - Low tail current Q2 - Switching frequency up to 20 kHz - Soft recovery parallel diodes G2 - Low diode VF - Low leakage current E2 - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance 0/VBUS NTC1 - Symmetrical design - Lead frames for power connections High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 1200 V CES T = 25C 220 C I Continuous Collector Current C T = 80C A 150 C I Pulsed Collector Current T = 25C 350 CM C V Gate Emitter Voltage 20 V GE P Maximum Power Dissipation T = 25C 690 W C D RBSOA Reverse Bias Safe Operating Area T = 125C 300A 1150V j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-6 www.microsemi.com APTGT150A120TG Rev 2 October, 2012 APTGT150A120TG All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 1200V 250 A CES GE CE V = 15V T = 25C 1.7 2.1 j GE V Collector Emitter Saturation Voltage V CE(sat) I = 150A C T = 125C 2.0 j V Gate Threshold Voltage V = V , I = 3 mA 5.0 5.8 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 400 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 10.7 ies GE V = 25V nF C Output Capacitance CE 0.56 oes f = 1MHz C Reverse Transfer Capacitance 0.48 res Inductive Switching (25C) T Turn-on Delay Time 280 d(on) V = 15V GE T Rise Time 40 r V = 600V ns Bus T Turn-off Delay Time 420 d(off) I = 150A C T Fall Time 75 f R = 2.2 G Inductive Switching (125C) T Turn-on Delay Time 290 d(on) V = 15V GE T Rise Time 45 r ns V = 600V Bus T Turn-off Delay Time 520 d(off) I = 150A C T Fall Time 90 f R = 2.2 G V = 15V GE E Turn-on Switching Energy T = 125C 14 on j V = 600V Bus mJ I = 150A C E Turn-off Switching Energy T = 125C 16 off j R = 2.2 G Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Maximum Peak Repetitive Reverse Voltage V 1200 V RRM T = 25C 250 j I Maximum Reverse Leakage Current V =1200V A RM R T = 125C 500 j I DC Forward Current Tc = 80C 150 A F T = 25C 1.6 2.1 j V Diode Forward Voltage I = 150A V F F T = 125C 1.6 j T = 25C 170 j t Reverse Recovery Time ns rr T = 125C 280 j I = 150A F T = 25C 15 j V = 600V R Q Reverse Recovery Charge C rr di/dt =3000A/s T = 125C 29 j T = 25C 7 j E Reverse Recovery Energy mJ r T = 125C 12 j 2-6 www.microsemi.com APTGT150A120TG Rev 2 October, 2012