APTGT200A120G Microchip

APTGT200A120G Phase leg V = 1200V CES Fast Trench + Field Stop IGBT3 I = 200A Tc = 80C C Power Module Application Welding converters VBUS Switched Mode Power Supplies Q1 Uninterruptible Power Supplies G1 Motor control E1 OUT Features Fast Trench + Field Stop IGBT3 Technology - Low voltage drop Q2 - Low tail current G2 - Switching frequency up to 20 kHz - Soft recovery parallel diodes E2 - Low diode VF - Low leakage current 0/VBUS - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 1200 V CES T = 25C 280 C I Continuous Collector Current C T = 80C A 200 C I Pulsed Collector Current T = 25C 400 CM C V Gate Emitter Voltage 20 V GE P Maximum Power Dissipation T = 25C 890 W C D RBSOA Reverse Bias Safe Operating Area T = 125C 400A 1100V j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-6 www.microsemi.com APTGT200A120G Rev 2 October, 2012 APTGT200A120G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 1200V 350 A CES GE CE T = 25C j 1.4 1.7 2.1 V =15V GE V Collector Emitter Saturation Voltage V CE(sat) I = 200A C T = 125C 2.0 j V Gate Threshold Voltage V = V , I = 3 mA 5.0 5.8 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 500 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 14 ies GE V = 25V C Output Capacitance CE 0.8 nF oes f = 1MHz C Reverse Transfer Capacitance 0.6 res T Turn-on Delay Time Inductive Switching (25C) 260 d(on) V = 15V GE T Rise Time 30 r V = 600V ns Bus T Turn-off Delay Time 420 d(off) I = 200A C T Fall Time 70 f R = 2.7 G T Turn-on Delay Time Inductive Switching (125C) 290 d(on) V = 15V GE T Rise Time 50 r V = 600V ns Bus T Turn-off Delay Time 520 d(off) I = 200A C T Fall Time 90 f R = 2.7 G V = 15V GE E Turn on Energy T = 125C 20 on j V = 600V Bus mJ I = 200A C E Turn off Energy T = 125C 20 off j R = 2.7 G Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Maximum Peak Repetitive Reverse Voltage V 1200 V RRM T = 25C 350 j I Maximum Reverse Leakage Current V =1200V A RM R T = 125C 600 j I DC Forward Current Tc = 80C 200 A F I = 200A T = 25C 1.6 2.1 F j V Diode Forward Voltage V F V = 0V GE T = 125C 1.6 j T = 25C 170 j t Reverse Recovery Time ns rr T = 125C 280 j I = 200A F T = 25C 18 j V = 600V R Q Reverse Recovery Charge C rr di/dt =2500A/s T = 125C 36 j T = 25C 10 j E Reverse Recovery Energy mJ r T = 125C 18 j 2-6 www.microsemi.com APTGT200A120G Rev 2 October, 2012