APTGT225DU170G Microchip

APTGT225DU170G Dual common source V = 1700V CES Trench + Field Stop IGBT3 I = 225A Tc = 80C C Power Module Application C1 C2 AC Switches Switched Mode Power Supplies Q1 Q2 Uninterruptible Power Supplies G1 G2 Features E1 E2 Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current E - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 1700 V CES T = 25C 340 C I Continuous Collector Current C A T = 80C 225 C I Pulsed Collector Current T = 25C 450 CM C V Gate Emitter Voltage 20 V GE P Maximum Power Dissipation T = 25C 1250 W C D RBSOA Reverse Bias Safe Operating Area T = 125C 450A 1600V j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-6 www.microsemi.com APTGT225DU170G Rev 2 October, 2012 APTGT225DU170G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 1700V 500 A CES GE CE V = 15V T = 25C 2.0 2.4 j GE V Collector Emitter Saturation Voltage V CE(sat) I = 225A C T = 125C 2.4 j V Gate Threshold Voltage V = V , I = 4mA 5.0 5.8 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 600 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 20 ies GE V = 25V nF C Output Capacitance CE 0.8 oes f = 1MHz C Reverse Transfer Capacitance 0.66 res Inductive Switching (25C) T Turn-on Delay Time 370 d(on) V = 15V GE T Rise Time 40 r V = 900V ns Bus T Turn-off Delay Time 650 d(off) I = 225A C T Fall Time 180 f R = 3.3 G Inductive Switching (125C) T Turn-on Delay Time 400 d(on) V = 15V GE T Rise Time 50 r ns V = 900V Bus T Turn-off Delay Time 800 d(off) I = 225A C T Fall Time 300 f R = 3.3 G V = 15V GE E Turn-on Switching Energy T = 125C 72 on j V = 900V Bus mJ I = 225A C E Turn-off Switching Energy T = 125C 70.5 off j R = 3.3 G Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 1700 V RRM T = 25C 500 j I Maximum Reverse Leakage Current V =1700V A RM R T = 125C 750 j I DC Forward Current Tc = 80C 225 A F T = 25C 1.8 2.2 j V Diode Forward Voltage I = 225A V F F T = 125C 1.9 j T = 25C 385 j t Reverse Recovery Time ns rr T = 125C 490 j I = 225A F T = 25C 57 j V = 900V Q Reverse Recovery Charge R C rr T = 125C 93 di/dt =2400A/s j T = 25C 26 j E Reverse Recovery Energy mJ r T = 125C 52 j 2-6 www.microsemi.com APTGT225DU170G Rev 2 October, 2012