APTGT50A120T1G Microchip

APTGT50A120T1G Phase leg V = 1200V CES Fast Trench + Field Stop IGBT3 I = 50A Tc = 80C C Power Module Application 56 11 Welding converters Switched Mode Power Supplies Q1 Uninterruptible Power Supplies CR1 Motor control 7 Features 8 3 Fast Trench + Field Stop IGBT3 Technology NTC 4 - Low voltage drop Q2 - Low tail current CR2 - Switching frequency up to 20 kHz 9 - Soft recovery parallel diodes - Low diode VF 10 - Low leakage current - RBSOA and SCSOA rated 12 1 2 Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 1/2 3/4 5/6 must be shorted together Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 1200 V CES T = 25C 75 C I Continuous Collector Current C A T = 80C 50 C I Pulsed Collector Current T = 25C 100 CM C V Gate Emitter Voltage 20 V GE T = 25C P Maximum Power Dissipation C 277 W D T = 125C RBSOA Reverse Bias Safe Operating Area 100A 1150V J These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 6 www.microsemi.com APTGT50A120T1G Rev 1 October, 2012 APTGT50A120T1G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 1200V 250 A CES GE CE T = 25C 1.4 1.7 2.1 V =15V GE j V Collector Emitter Saturation Voltage V CE(sat) I = 50A C T = 125C 2.0 j V Gate Threshold Voltage V = V , I = 2mA 5.0 5.8 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 400 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V,V = 25V 3600 ies GE CE pF f = 1MHz C Reverse Transfer Capacitance 160 rss Inductive Switching (25C) T Turn-on Delay Time 90 d(on) V = 15V GE T Rise Time 30 r V = 600V ns Bus T Turn-off Delay Time 420 d(off) I = 50A C T Fall Time 70 f R = 18 G Inductive Switching (125C) T Turn-on Delay Time 90 d(on) V = 15V GE T Rise Time 50 r V = 600V ns Bus T Turn-off Delay Time 520 d(off) I = 50A C T Fall Time 90 f R = 18 G V = 15V GE E Turn-on Switching Energy T = 125C 5 on j V = 600V Bus mJ I = 50A C E Turn-off Switching Energy T = 125C 5.5 off j R = 18 G Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 1200 V RRM T = 25C 250 j I Maximum Reverse Leakage Current V =1200V A RM R T = 125C 500 j I DC Forward Current Tc = 80C 50 A F T = 25C 1.6 2.1 j V Diode Forward Voltage I = 50A V F F T = 125C 1.6 j T = 25C 170 j t Reverse Recovery Time ns rr T = 125C 280 j I = 50A F T = 25C 5.6 j V = 600V Q Reverse Recovery Charge R C rr T = 125C 9.9 di/dt =1900A/s j T = 25C 2.2 j E Reverse Recovery Energy mJ r T = 125C 4.1 j 2 6 www.microsemi.com APTGT50A120T1G Rev 1 October, 2012