APTGT50A170T1G Microchip

APTGT50A170T1G Phase leg V = 1700V CES Trench + Field Stop IGBT3 I = 50A Tc = 80C C Power Module Application 56 11 Welding converters Switched Mode Power Supplies Q1 Uninterruptible Power Supplies CR1 Motor control 7 Features 8 3 Trench + Field Stop IGBT3 Technology NTC 4 - Low voltage drop Q2 - Low tail current CR2 - Switching frequency up to 20 kHz 9 - Soft recovery parallel diodes - Low diode VF 10 - Low leakage current - RBSOA and SCSOA rated 12 1 2 Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 1/2 3/4 5/6 must be shorted together Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 1700 V CES T = 25C 75 C I Continuous Collector Current C A T = 80C 50 C I Pulsed Collector Current T = 25C 100 CM C V Gate Emitter Voltage 20 V GE T = 25C P Maximum Power Dissipation C 312 W D RBSOA Reverse Bias Safe Operating Area T = 125C 100A 1600V j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 6 www.microsemi.com APTGT50A170T1G Rev 1 October, 2012 APTGT50A170T1G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 1700V 250 A CES GE CE T = 25C 2.0 2.4 V = 15V GE j V Collector Emitter Saturation Voltage V CE(sat) I = 50A C T = 125C 2.4 j V Gate Threshold Voltage V = V , I = 1mA 5.0 5.8 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 400 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 4400 ies GE V = 25V C Output Capacitance CE 180 pF oes f = 1MHz C Reverse Transfer Capacitance 150 res T Turn-on Delay Time Inductive Switching (25C) 370 d(on) V = 15V GE T Rise Time 40 r V = 900V ns Bus T Turn-off Delay Time 650 d(off) I = 50A C T Fall Time R = 10 180 f G Inductive Switching (125C) T Turn-on Delay Time 400 d(on) V = 15V GE T Rise Time 50 r V = 900V ns Bus T Turn-off Delay Time 800 d(off) I = 50A C T Fall Time 300 f R = 10 G V = 15V GE E Turn-on Switching Energy T = 125C 16 on j V = 900V Bus mJ I = 50A C E Turn-off Switching Energy T = 125C 15 off j R = 10 G Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Maximum Peak Repetitive Reverse Voltage V 1700 V RRM T = 25C 250 j I Maximum Reverse Leakage Current V =1700V A RM R T = 125C 500 j I DC Forward Current Tc = 80C 50 A F T = 25C 1.8 2.2 j V Diode Forward Voltage I = 50A V F F T = 125C 1.9 j T = 25C 385 j t Reverse Recovery Time ns rr T = 125C 490 j I = 50A F T = 25C 14 j Q Reverse Recovery Charge V = 900V C R rr T = 125C 23 j di/dt =800A/s T = 25C 6 j E Reverse Recovery Energy mJ r T = 125C 12 j 2 6 www.microsemi.com APTGT50A170T1G Rev 1 October, 2012