MIXA150R1200VA preliminary V = 1200 V CES XPT IGBT Module I = 250 A C25 V = 1.7 V CE(sat) Boost Chopper Part number MIXA150R1200VA Backside: isolated 6/7 1/2 9 10 4/5 Features / Advantages: Applications: Package: V1-A-Pack Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~ 3600 coefficient of the on-state voltage Solar inverter Industry standard outline Rugged XPT design (Xtreme light Punch Through) Medical equipment RoHS compliant results in: Uninterruptible power supply Soldering pins for PCB mounting - short circuit rated for 10 sec. Air-conditioning systems Height: 17 mm - very low gate charge Welding equipment Base plate: DCB ceramic - low EMI Switched-mode and resonant-mode Reduced weight - square RBSOA 3x Ic power supplies Advanced power cycling Thin wafer technology combined with the XPT design Inductive heating, cookers results in a competitive low VCE(sat) Pumps, Fans SONIC diode - fast and soft reverse recovery - low operating forward voltage Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments - the conclusion of quality agreements - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20170522c 2017 IXYS all rights reservedMIXA150R1200VA preliminary Ratings IGBT Symbol Definition Conditions min. typ. max. Unit collector emitter voltage T = 25C 1200 V V VJ CES max. DC gate voltage 20 V V GES max. transient gate emitter voltage V 30 V GEM collector current I T = 25C 250 A C C25 T = 8 0 C 175 A I C C80 total power dissipation T = 25C 695 W P tot C collector emitter saturation voltage V I = 1 5 0 A V = 15 V T = 25C 1.7 2.1 V CE(sat) C GE VJ 125 T = C 1.9 V VJ gate emitter threshold voltage I = 6 mA V = V T = 25C 6 6.8 7.5 V V VJ GE(th) C GE CE collector emitter leakage current V = V V = 0 V T = 25C 0.1 mA I CES CE CES GE VJ 125 T = C 0.1 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE total gate charge V = 6 0 0 V V = 15 V I = 1 5 0 A 510 nC Q G(on) CE GE C turn-on delay time 220 ns t d(on) current rise time t 100 ns r inductive load T = 1 2 5 C VJ turn-off delay time t 400 ns d(off) V = 6 0 0 V I = 1 5 0 A CE C current fall time 220 ns t f V = 15 V R = 1 . 2 GE G turn-on energy per pulse 21.5 mJ E on turn-off energy per pulse E 17 mJ off reverse bias safe operating area RBSOA V = 15 V R = 1 . 2 T = 1 2 5 C GE G VJ A V = 1 2 0 0 V 450 I CM CEmax short circuit safe operating area V = 1 2 0 0 V SCSOA CEmax short circuit duration t V = 9 0 0 V V = 15 V T = 1 2 5 C 10 s SC CE GE VJ short circuit current I R = 1 . 2 non-repetitive 650 A SC G thermal resistance junction to case 0.16 K/W R thJC thermal resistance case to heatsink K/W R 0.10 thCH Diode max. repetitive reverse voltage T = 25C 1200 V V VJ RRM forward current T = 25C 190 A I C F25 I T = 8 0 C 130 A C F80 forward voltage V I = 1 5 0 A T = 25C 2.20 V VJ F F T = 125C 1.95 V VJ reverse current V = V T = 25C 0.3 mA I R R RRM VJ T = 125C 0.8 mA VJ reverse recovery charge Q 20 C rr V = 600 V R max. reverse recovery current 175 A I RM -di /dt = 2 5 0 0 A/s T = 125C F VJ reverse recovery time 350 ns t rr I = 1 5 0 A V = 0 V F GE reverse recovery energy E 10 mJ rec thermal resistance junction to case R 0.28 K/W thJC thermal resistance case to heatsink K/W R 0.20 thCH IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20170522c 2017 IXYS all rights reserved