Technische Information / Technical Information IGBT-Module FS450R17KE3 IGBT-modules EconoPACK+ Modul mit Trench/Feldstop IGBT und Emitter Controlled3 Diode EconoPACK+ module with trench/fieldstop IGBT and Emitter Controlled3 diode Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80C, T = 150C I 450 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 605 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 900 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150 P 2250 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 450 A, V = 15 V T = 25C 2,00 2,45 V C GE vj V CE sat Collector-emitter saturation voltage I = 450 A, V = 15 V T = 125C 2,40 V C GE vj Gate-Schwellenspannung IC = 18,0 mA, VCE = VGE, Tvj = 25C VGEth 5,2 5,8 6,4 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 5,10 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,7 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 40,5 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,30 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1700 V, V = 0 V, T = 25C I 3,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 450 A, VCE = 900 V Tvj = 25C 0,28 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,30 s GE vj RGon = 3,3 Anstiegszeit, induktive Last IC = 450 A, VCE = 900 V Tvj = 25C 0,08 s t r Rise time, inductive load V = 15 V T = 125C 0,10 s GE vj RGon = 3,3 Abschaltverzgerungszeit, induktive Last IC = 450 A, VCE = 900 V Tvj = 25C 0,81 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 1,00 s GE vj RGoff = 3,3 Fallzeit, induktive Last IC = 450 A, VCE = 900 V Tvj = 25C 0,18 s t f Fall time, inductive load V = 15 V T = 125C 0,30 s GE vj RGoff = 3,3 Einschaltverlustenergie pro Puls IC = 450 A, VCE = 900 V, LS = 80 nH Tvj = 25C 96,5 mJ Turn-on energy loss per pulse V = 15 V T = 125C E 140 mJ GE vj on RGon = 3,3 Abschaltverlustenergie pro Puls IC = 450 A, VCE = 900 V, LS = 80 nH Tvj = 25C 96,0 mJ Turn-off energy loss per pulse V = 15 V T = 125C E 140 mJ GE vj off RGoff = 3,3 Kurzschluverhalten VGE 15 V, VCC = 1000 V I SC SC data V = V -L di/dt t 10 s, T = 125C 1800 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,055 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,047 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: MW date of publication: 2013-10-02 approved by: WR revision: 2.3 1Technische Information / Technical Information IGBT-Module FS450R17KE3 IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1700 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 450 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 900 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 20000 As R P vj It - value Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 450 A, V = 0 V T = 25C 1,80 2,20 V F GE vj VF Forward voltage I = 450 A, V = 0 V T = 125C 1,90 V F GE vj Rckstromspitze I = 450 A, - di /dt = 4450 A/s (T =125C) T = 25C 525 A F F vj vj Peak reverse recovery current V = 900 V T = 125C I 570 A R vj RM V = -15 V GE Sperrverzgerungsladung I = 450 A, - di /dt = 4450 A/s (T =125C) T = 25C 115 C F F vj vj Recovered charge V = 900 V T = 125C Q 195 C R vj r V = -15 V GE Abschaltenergie pro Puls I = 450 A, - di /dt = 4450 A/s (T =125C) T = 25C 60,5 mJ F F vj vj Reverse recovery energy V = 900 V T = 125C E 110 mJ R vj rec V = -15 V GE Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 0,10 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 0,085 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions NTC-Widerstand / NTC-Thermistor Charakteristische Werte / Characteristic Values min. typ. max. Nennwiderstand T = 25C R 5,00 k C 25 Rated resistance Abweichung von R100 T = 100C, R = 493 R/R -5 5 % C 100 Deviation of R100 Verlustleistung T = 25C P 20,0 mW C 25 Power dissipation B-Wert R = R exp B (1/T - 1/(298,15 K)) B 3375 K 2 25 25/50 2 25/50 B-value B-Wert R = R exp B (1/T - 1/(298,15 K)) B t.b.d. K 2 25 25/80 2 25/80 B-value B-Wert R2 = R25 exp B25/100(1/T2 - 1/(298,15 K)) B25/100 t.b.d. K B-value Angaben gem gltiger Application Note. Specification according to the valid application note. prepared by: MW date of publication: 2013-10-02 approved by: WR revision: 2.3 2