Technische Information / Technical Information IGBT-Modul DDB6U180N16RR B11 IGBT-Module EconoPACK2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT EconoPACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT V = 1600V CES I = 180A / I = 360A C nom CRM Typische Anwendungen Typical Applications Hilfsumrichter Auxiliary Inverters Klimaanlagen Air Conditioning Motorantriebe Motor Drives Servoumrichter Servo Drives Elektrische Eigenschaften Electrical Features T = 150C T = 150C vj op vj op Mechanische Eigenschaften Mechanical Features Al O Substrat mit kleinem thermischen Al O Substrate with Low Thermal Resistance 2 3 2 3 Widerstand Hohe Leistungsdichte High Power Density Isolierte Bodenplatte Isolated Base Plate Kompaktes Design Compact design PressFIT Verbindungstechnik PressFIT Contact Technology RoHS konform RoHS compliant Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CM date of publication: 2014-06-10 approved by: RS revision: 3.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul DDB6U180N16RR B11 IGBT-Module Diode, Gleichrichter / Diode, Rectifier Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1600 V vj RRM Repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Chip T = 80C I 150 A C FRMSM Maximum RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom T = 80C I 180 A C RMSM Maximum RMS current at rectifier output Stostrom Grenzwert t = 10 ms, T = 25C 1600 A p vj I FSM Surge forward current tp = 10 ms, Tvj = 150C 1400 A Grenzlastintegral tp = 10 ms, Tvj = 25C 13000 As It It - value t = 10 ms, T = 150C 9500 As p vj Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung T = 150C, I = 150 A V 1,20 V vj F F Forward voltage Schleusenspannung Tvj = 150C VTO 0,83 V Threshold voltage Ersatzwiderstand T = 150C r 2,30 m vj T Slope resistance Sperrstrom Tvj = 150C, VR = 1600 V IR 1,00 mA Reverse current Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 0,35 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 0,165 K/W Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: CM date of publication: 2014-06-10 approved by: RS revision: 3.0 2