APTGT50DDA120T3G Microchip

APTGT50DDA120T3G Dual Boost chopper V = 1200V CES Fast Trench + Field Stop IGBT3 I = 50A Tc = 80C C Power Module Application 13 14 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 CR2 Features Fast Trench + Field Stop IGBT3 Technology 22 7 - Low voltage drop - Low tail current 23 8 - Switching frequency up to 20 kHz Q1 Q2 - Soft recovery parallel diodes 26 4 - Low diode VF - Low leakage current 27 3 - RBSOA and SCSOA rated Kelvin emitter for easy drive 29 30 31 32 Low stray inductance 15 16 High level of integration R1 Internal thermistor for temperature monitoring Benefits 28 27 26 25 23 22 20 19 18 Outstanding performance at high frequency 29 16 operation 30 15 Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting 31 14 Low profile 32 13 Easy paralleling due to positive TC of VCEsat 2 3 4 7 8 10 11 12 Each leg can be easily paralleled to achieve a single boost of twice the current capability. All multiple inputs and outputs must be shorted together RoHS Compliant Example: 13/14 29/30 22/23 Absolute maximum ratings Symbol Parameter Max ratings Unit V V Collector - Emitter Breakdown Voltage 1200 CES T = 25C 75 C I Continuous Collector Current C A T = 80C 50 C I Pulsed Collector Current T = 25C 100 CM C V Gate Emitter Voltage 20 V GE P Maximum Power Dissipation T = 25C 270 W C D T = 125C RBSOA Reverse Bias Safe Operating Area J 100A 1150V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-6 www.microsemi.com APTGT50DDA120T3G Rev 2 October, 2012 APTGT50DDA120T3G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit T = 25C 250 V = 0V j GE I Zero Gate Voltage Collector Current A CES V = 1200V CE T = 125C 500 j T = 25C 1.4 1.7 2.1 V =15V GE j V Collector Emitter saturation Voltage V CE(sat) I = 50A C T = 125C 2.0 j V Gate Threshold Voltage V = V , I = 2mA 5.0 5.8 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 400 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V,V = 25V 3600 ies GE CE pF f = 1MHz C Reverse Transfer Capacitance 160 rss Inductive Switching (25C) T Turn-on Delay Time 90 d(on) V = 15V GE T Rise Time 30 r V = 600V ns Bus T Turn-off Delay Time 420 d(off) I = 50A C T Fall Time 70 f R = 18 G Inductive Switching (125C) T Turn-on Delay Time 90 d(on) V = 15V GE T Rise Time 50 r V = 600V ns Bus T Turn-off Delay Time 520 d(off) I = 50A C T Fall Time 90 f R = 18 G V = 15V GE E Turn-on Switching Energy T = 125C 5 on j V = 600V Bus mJ I = 50A C E Turn-off Switching Energy T = 125C 5.5 off j R = 18 G Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 1200 V RRM T = 25C 250 j I Maximum Reverse Leakage Current V =1200V A RM R T = 125C 500 j I DC Forward Current Tc = 70C 60 A F I = 60A 2 2.5 F I = 120A 2.3 V Diode Forward Voltage V F F T = 125C I = 60A j 1.8 F T = 25C 400 j t Reverse Recovery Time ns rr I = 60A F T = 125C 470 j V = 800V R T = 25C 1200 j di/dt =200A/s Q Reverse Recovery Charge nC rr T = 125C 4000 j I = 60A F E Reverse Recovery Energy V = 800V T = 125C 2.2 mJ r j R di/dt =1000A/s 2-6 www.microsemi.com APTGT50DDA120T3G Rev 2 October, 2012