/ Technical Information IGBT- FS100R07N3E4 B11 IGBT-modules EconoPACK3 /IGBT4 pressfitNTC EconoPACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC / Preliminary Data V = 650V CES IC nom = 100A / ICRM = 200A Typical Applications Motor Drives Electrical Features 650V Increased blocking voltage capability to 650V High Short Circuit Capability, Self Limiting Short Circuit Current IGBT4 Trench IGBT 4 T = 150C T = 150C vj op vj op Mechanical Features NTC Integrated NTC temperature sensor Copper Base Plate PressFIT PressFIT Contact Technology Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AS date of publication: 2013-11-06 approved by: RS revision: 2.0 UL approved (E83335) 1 / Technical Information IGBT- FS100R07N3E4 B11 IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 650 V vj CES Collector-emitter voltage T = 70C, T = 175C I 100 A C vj max C nom Continuous DC collector current t = 1 ms I 200 A P CRM Repetitive peak collector current T = 25C, T = 175C P 335 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 100 A, V = 15 V T = 25C 1,55 1,95 V C GE vj Collector-emitter saturation voltage I = 100 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat I = 100 A, V = 15 V T = 150C 1,75 V C GE vj I = 1,60 mA, V = V , T = 25C V 5,0 5,8 6,5 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 1,00 C Gate charge T = 25C R 2,0 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 6,20 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,19 nF vj CE GE res Reverse transfer capacitance - VCE = 650 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 100 A, V = 300 V T = 25C 0,07 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,08 s R = 3,3 T = 150C 0,08 s Gon vj () I = 100 A, V = 300 V T = 25C 0,02 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,02 s R = 3,3 T = 150C 0,02 s Gon vj () I = 100 A, V = 300 V T = 25C 0,26 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,29 s R = 3,3 T = 150C 0,30 s Goff vj () I = 100 A, V = 300 V T = 25C 0,07 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,07 s R = 3,3 T = 150C 0,07 s Goff vj () I = 100 A, V = 300 V, L = 30 nH T = 25C 0,33 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 5100 A/s (Tvj = 150C) Tvj = 125C Eon 0,77 mJ R = 3,3 T = 150C 0,88 mJ Gon vj ( I = 100 A, V = 300 V, L = 30 nH T = 25C 3,50 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 4000 V/s (Tvj = 150C)Tvj = 125C Eoff 4,70 mJ R = 3,3 T = 150C 4,90 mJ Goff vj V 15 V, V = 360 V t 10 s, T = 25C 480 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 380 A IGBT / per IGBT R 0,45 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,085 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-11-06 approved by: RS revision: 2.0 2