APTGF300U120DG Microchip

APTGF300U120DG Single Switch V = 1200V CES I = 300A Tc = 80C with Series diodes C NPT IGBT Power Module Application EK Zero Current Switching resonant mode EC Features Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes G CK - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive T of V C CEsat Low profile RoHS compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 1200 V CES T = 25C 400 c I Continuous Collector Current C T = 80C 300 A c I Pulsed Collector Current T = 25C 600 CM c V Gate Emitter Voltage 20 V GE T = 25C P Maximum Power Dissipation 1780 W c D RBSOA Reverse Bias Safe Operating Area T = 150C 600A 1200V j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 6 www.microsemi.com APTGF300U120DG Rev 2 October, 2012 APTGF300U120DG All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit T = 25C j 500 V = 0V GE I Zero Gate Voltage Collector Current A CES V = 1200V T = 125C CE j 750 T = 25C V =15V j 3.3 3.9 GE V Collector Emitter saturation Voltage V CE(sat) I = 300A C T = 125C 4 j V Gate Threshold Voltage V = V , I = 12mA 4.5 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 1 A GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 21 V = 0V ies GE V = 25V nF C Output Capacitance 2.9 oes CE f = 1MHz C Reverse Transfer Capacitance 1.52 res Inductive Switching (25C) T Turn-on Delay Time 120 d(on) V = 15V GE T Rise Time 50 r ns V = 600V Bus T Turn-off Delay Time 310 d(off) I = 300A C T Fall Time 30 f R = 3 G Inductive Switching (125C) T Turn-on Delay Time 130 d(on) V = 15V GE T Rise Time 60 r V = 600V ns Bus T Turn-off Delay Time 360 d(off) I = 300A C T Fall Time R = 3 40 f G V = 15V GE E Turn-on Switching Energy T = 125C 25 on j V = 600V Bus mJ I = 300A C E Turn-off Switching Energy T = 125C 15 off j R = 3 G Diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Maximum Peak Repetitive Reverse Voltage V 1200 V RRM T = 25C 250 j I Maximum Reverse Leakage Current V =1200V A RM R T = 125C 500 j I DC Forward Current Tc = 80C 300 A F T = 25C 2.1 j V Diode Forward Voltage I = 300A V F F T = 125C 1.9 j T = 25C 120 j t Reverse Recovery Time ns rr T = 125C 210 j I = 300A F T = 25C 22 j V = 600V Q Reverse Recovery Charge C rr R T = 125C 43 j di/dt =4500A/s T = 25C 7 j Er Reverse Recovery Energy mJ T = 125C 15 j 2 6 www.microsemi.com APTGF300U120DG Rev 2 October, 2012