APTGF50DH120T3G Microchip

APTGF50DH120T3G Asymmetrical - Bridge V = 1200V CES I = 50A Tc = 80C C NPT IGBT Power Module Application 13 14 AC and DC motor control Switched Mode Power Supplies Q1 CR1 CR3 18 Features Non Punch Through (NPT) Fast IGBT - Low voltage drop 22 7 19 - Low tail current - Switching frequency up to 50 kHz 23 8 - Soft recovery parallel diodes Q4 CR2 CR4 - Low diode VF 4 - Low leakage current - RBSOA and SCSOA rated 3 - Symmetrical design Kelvin emitter for easy drive 29 30 31 32 Very low stray inductance 15 16 High level of integration R1 Internal thermistor for temperature monitoring Benefits 28 27 26 25 23 22 20 19 18 Outstanding performance at high frequency 29 16 operation 30 15 Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting 31 14 Low profile 32 13 Easy paralleling due to positive TC of VCEsat 2 3 4 7 8 10 11 12 RoHS compliant All multiple inputs and outputs must be shorted together Example: 13/14 29/30 22/23 Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 1200 V CES T = 25C 70 c I Continuous Collector Current C A T = 80C 50 c I Pulsed Collector Current T = 25C 150 CM c V Gate Emitter Voltage 20 V GE P Maximum Power Dissipation T = 25C 312 W c D RBSOA Reverse Bias Safe Operating Area T = 150C 100A 1200V j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-8 www.microsemi.com APTGF50DH120T3G Rev 1 October, 2012 APTGF50DH120T3G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = 0V T = 25C 250 GE j I Zero Gate Voltage Collector Current A CES V = 1200V T = 125C 500 CE j T = 25C 3.2 3.7 V =15V j GE V Collector Emitter saturation Voltage V CE(sat) I = 50A C T = 125C 4.0 j V Gate Threshold Voltage V = V , I = 1 mA 4.5 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20 V, V = 0V 100 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 3450 V = 0V ies GE V = 25V pF C Output Capacitance 330 oes CE f = 1MHz C Reverse Transfer Capacitance 220 res Q Total gate Charge 330 g V = 15V GS V = 600V nC Q Gate Emitter Charge 35 ge Bus I = 50A C Q Gate Collector Charge 200 gc Inductive Switching (25C) T Turn-on Delay Time 35 d(on) V = 15V GE T Rise Time 65 r V = 600V ns Bus T Turn-off Delay Time 320 d(off) I = 50A C T Fall Time R = 5 30 G f Inductive Switching (125C) T Turn-on Delay Time 35 d(on) V = 15V GE T Rise Time 65 r V = 600V ns Bus T Turn-off Delay Time 360 d(off) I = 50A C T Fall Time R = 5 40 f G V = 15V GE E Turn-on Switching Energy T = 125C 6.9 on j V = 600V Bus mJ I = 50A C E Turn-off Switching Energy T = 125C 3.05 off j R = 5 G V 15V V = 900V GE Bus I Short Circuit data 300 A sc t 10s T = 125C p j Diode ratings and characteristics (CR2 & CR3) Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 1200 V RRM T = 25C 100 j I Maximum Reverse Leakage Current V =1200V A RM R T = 125C 500 j I DC Forward Current Tc = 80C 60 A F I = 60A 2.5 3 F V Diode Forward Voltage I = 120A 3 V F F I = 60A T = 125C F j 1.8 T = 25C 265 j t Reverse Recovery Time ns rr I = 60A F T = 125C 350 j V = 800V R T = 25C 560 j di/dt =200A/s Q Reverse Recovery Charge nC rr T = 125C 2890 j CR1 & CR4 are IGBT protection diodes only 2-8 www.microsemi.com APTGF50DH120T3G Rev 1 October, 2012