FZ1200R12KF4 Infineon

European Power- Semiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 M8 18 screwing depth max. 8 130 31,5 114 C C E E E G C 16,5 7 M4 2,5 28 18,5 external connection to be done C C C G E E E external connection to be done A15/97 Mod-E/ 21.Jan 1998 G.SchulzeFZ 1200 R 12 KF4 Hchstzulssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage V 1200 V CES Kollektor-Dauergleichstrom DC-collector current I 1200 A C Periodischer Kollektor Spitzenstrom repetitive peak collctor current t =1 ms I 2400 A p CRM Gesamt-Verlustleistung total power dissipation t =25C, Transistor /transistor P 7800 W C tot Gate-Emitter-Spitzenspannung gate-emitter peak voltage V 20 V GE Dauergleichstrom DC forward current I 1200 A F Periodischer Spitzenstrom repetitive peak forw. current t =1ms I 2400 A p FRM Isolations-Prfspannung insulation test voltage RMS, f=50 Hz, t= 1 min. V 2,5 kV ISOL Charakteristische Werte / Characteristic values: Transistor min. typ. max. Kollektor-Emitter Sttigungsspannung collector-emitter saturation voltage i =1,2kA, v =15V, t =25C v - 2,7 3,2 V C GE vj CE sat i =1,2kA, v =15V, t =125C - 3,3 3,9 V C GE vj Gate-Schwellenspannung gate threshold voltage i =48mA, v =v , t =25C v 4,5 5,5 6,5 V C CE GE vj GE(th) Eingangskapazitt input capacity f =1MHz,t =25C,v =25V, v =0V C - 90 - nF O vj CE GE ies Kollektor-Emitter Reststrom collector-emitter cut-off current v =1200V, v =0V, t =25C i - 16 - mA CE GE vj CES v =1200V, v =0V, t =125C - 100 200 mA CE GE vj Gate-Emitter Reststrom gate leakage current v =0V, v =20V, t =25C i - - 400 nA CE GE vj GES Emitter-Gate Reststrom gate leakage current v =0V, v =20V, t =25C i - - 400 nA CE EG vj EGS Einschaltzeit (induktive Last) turn-on time (inductive load) i =1,2kA,v =600V t C CE on vL = 15V, R = 0,82 , t =25 0,7 - s G vj vL = 15V, R = 0,82 , t =125 - 0,8 - s G vj Speicherzeit (induktive Last) storage time (inductive load) i =1,2kA,v =600V t C CE s vL = 15V, R = 0,82 , t =25 - 0,9 - s G vj vL = 15V, R = 0,82 , t =125 - 1,0 - s G vj Fallzeit (induktive Last) fall time (inductive load) i =1,2kA,v =600V t C CE f vL = 15V, R = 0,82 , t =25 - 0,10 - s G vj vL = 15V, R = 0,82 , t =125 - 0,15 - s G vj Einschaltverlustenergie pro Puls turn-on energy loss per puls i =1,2kA, v =600V, L =70nH C CE s v =15V,R =0,82 ,T =125C E - 170 - mWs L G vj on Abschaltverlustleistung pro Puls turn-off energy loss per puls i =1,2kA, v =600V, L =70nH C CE s v =15V,R =0,82 ,T =125C E - 190 - mWs L G vj off Charakteristische Werte / Characteristic values Inversdiode / Inverse diode Durchlaspannung forward voltage i =1,2kA, v =0V, t =25C v - 2,2 2,7 V F GE vj F i =1,2kA, v =0V, t =125C - 2,0 2,5 V F GE vj Rckstromspitze peak reverse recovery current i =1,2kA, v =600V, v = 10V I F RM EG RM -di /dt = 6 kA/s, t = 25C - 400 - A F vj t = 125C - 700 - A vj Sperrverzgerungsladung recovered charge i =1,2kA, v =600V, v = 10V Q F RM EG r -di /dt = 6 kA/s, t = 25C - 50 - As F vj - 150 - As t = 125C vj Thermische Eigenschaften / Thermal properties Innerer Wrmewiderstand thermal resistance, junction to case Transistor / transistor, DC R 0,016 C/W thJC Transistor,DC,pro Zweig/per arm 0,032 C/W bergangs-Wrmewiderstand thermal resistance, case to heatsink pro Modul / per Module R 0,008 C/W thCK Hchstzul. Sperrschichttemperatur max. junction temperature pro Modul / per Module t 150 C vj max Betriebstemperatur operating temperature Transistor / transistor t -40...+125 C c op Lagertemperatur storage temperature t -40...+125 C stg Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation AI O 2 3 Anzugsdrehmoment f. mech. Befestigung mounting torque terminals M6 / tolerance +/-15% M1 5 Nm Anzugsdrehmoment f. elektr. Anschlsse terminal connection torque terminals M4 / tolerance +/-15% M2 2 Nm terminals M8 8...10 Nm Gewicht weight G ca. 1500 g Bedingung fr den Kurzschluschutz / Conditions for short-circuit protection t = 10 s V = 750 V fg CC v = 15 V v = 900 V L CEM R = R = 0,82 i 10000 A GF GR CMK1 t = 125C i 8000 A vj CMK2 v Unabhngig davon gilt bei abweichenden Bedingungen / with regard to other conditions = V - 15nH x di /dt CES c CEM Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.