APTGF90A60T1G Microchip

APTGF90A60T1G Phase leg V = 600V CES I = 90A Tc = 80C C NPT IGBT Power Module Application 56 11 Welding converters Switched Mode Power Supplies Q1 Uninterruptible Power Supplies CR1 Motor control 7 Features 8 Non Punch Through (NPT) Fast IGBT 3 NTC - Low voltage drop 4 - Low tail current Q2 CR2 - Switching frequency up to 100 kHz - Soft recovery parallel diodes 9 - Low diode VF - Low leakage current 10 - RBSOA and SCSOA rated Very low stray inductance 1 2 12 - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 1/2 3/4 5/6 must be shorted together Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 600 V CES T = 25C 110 c I Continuous Collector Current C T = 80C 90 A c I Pulsed Collector Current T = 25C 315 CM c V Gate Emitter Voltage 20 V GE T = 25C P Maximum Power Dissipation 416 W c D RBSOA Reverse Bias Safe Operating Area T = 150C 200A 600V j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 7 www.microsemi.com APTGF90A60T1G Rev 1 October, 2012 APTGF90A60T1G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = 0V T = 25C 250 GE j I Zero Gate Voltage Collector Current A CES V = 600V T = 125C 500 CE j T = 25C V =15V 2.0 2.5 j GE V Collector Emitter saturation Voltage V CE(sat) I = 90A T = 125C C 2.2 j V Gate Threshold Voltage V = V , I = 1mA 3 5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20 V, V = 0V 150 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 4300 ies GE V = 25V C Output Capacitance CE 470 pF oes f = 1MHz C Reverse Transfer Capacitance 400 res Q Total gate Charge V = 15V 330 GE g V = 300V Bus Q Gate Emitter Charge 290 nC ge I = 90A C Q Gate Collector Charge 200 gc T Turn-on Delay Time Inductive Switching (25C) 26 d(on) V = 15V GE T Rise Time 25 r V = 400V ns Bus T Turn-off Delay Time 150 d(off) I = 90A C T Fall Time 30 f R = 5 G Inductive Switching (125C) T Turn-on Delay Time 26 d(on) V = 15V GE T Rise Time 25 r V = 400V ns Bus T Turn-off Delay Time 170 d(off) I = 90A C T Fall Time 40 R = 5 f G V = 15V GE E Turn-on Switching Energy T = 125C 4.3 on j V = 400V Bus mJ I = 90A C E Turn-off Switching Energy T = 125C 3.5 off j R = 5 G Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 600 V RRM T = 25C 35 j I Maximum Reverse Leakage Current V =600V A RM R T = 125C 600 j I DC Forward Current Tc = 80C 60 A F I = 60A 1.8 2.2 F I = 120A 2.2 V Diode Forward Voltage V F F T = 125C I = 60A j 1.5 F T = 25C 25 j t Reverse Recovery Time ns rr I = 60A F T = 125C 160 j V = 400V R T = 25C 70 di/dt =400A/s j Q Reverse Recovery Charge nC rr T = 125C 960 j 2 7 www.microsemi.com APTGF90A60T1G Rev 1 October, 2012