/ Technical Information IGBT- FZ1600R17KE3 IGBT-modules IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage T = 80C, T = 150C I 1600 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 2300 A t = 1 ms I 3200 A P CRM Repetitive peak collector current T = 25C, T = 150 P 8,95 kW C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 1600 A, V = 15 V T = 25C 2,00 2,45 V C GE vj V CE sat Collector-emitter saturation voltage I = 1600 A, V = 15 V T = 125C 2,40 V C GE vj IC = 64,0 mA, VCE = VGE, Tvj = 25C VGEth 5,2 5,8 6,4 V Gate threshold voltage V = -15 V ... +15 V Q 19,0 C GE G Gate charge Tvj = 25C RGint 1,0 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 145 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 4,70 nF Reverse transfer capacitance - V = 1700 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 1600 A, VCE = 900 V Tvj = 25C 0,54 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,58 s GE vj RGon = 0,9 () IC = 1600 A, VCE = 900 V Tvj = 25C 0,16 s t r Rise time, inductive load V = 15 V T = 125C 0,17 s GE vj RGon = 0,9 () IC = 1600 A, VCE = 900 V Tvj = 25C 1,30 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 1,50 s GE vj RGoff = 1,1 () IC = 1600 A, VCE = 900 V Tvj = 25C 0,15 s t f Fall time, inductive load V = 15 V T = 125C 0,27 s GE vj RGoff = 1,1 () IC = 1600 A, VCE = 900 V, LS = 50 nH Tvj = 25C 290 mJ Turn-on energy loss per pulse V = 15 V T = 125C E 440 mJ GE vj on RGon = 0,9 ( IC = 1600 A, VCE = 900 V, LS = 50 nH Tvj = 25C 435 mJ Turn-off energy loss per pulse V = 15 V T = 125C E 585 mJ GE vj off RGoff = 1,1 VGE 15 V, VCC = 1000 V I SC SC data V = V -L di/dt t 10 s, T = 125C 6100 A CEmax CES sCE P vj IGBT / per IGBT R 14,0 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT R 9,00 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: MW date of publication: 2013-10-02 approved by: CL revision: 2.0 1 / Technical Information IGBT- FZ1600R17KE3 IGBT-modules Preliminary Data , / Diode, Inverter / Maximum Rated Values T = 25C V 1700 V vj RRM Repetitive peak reverse voltage I 1600 A F Continuous DC forward current t = 1 ms I 3200 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 335 kAs R P vj It - value / Characteristic Values min. typ. max. I = 1600 A, V = 0 V T = 25C 1,80 2,20 V F GE vj VF Forward voltage I = 1600 A, V = 0 V T = 125C 1,90 V F GE vj I = 1600 A, - di /dt = 8700 A/s (T =125C) T = 25C 1450 A F F vj vj Peak reverse recovery current V = 900 V T = 125C I 1700 A R vj RM V = -15 V GE I = 1600 A, - di /dt = 8700 A/s (T =125C) T = 25C 385 C F F vj vj Recovered charge V = 900 V T = 125C Q 670 C R vj r V = -15 V GE I = 1600 A, - di /dt = 8700 A/s (T =125C) T = 25C 255 mJ F F vj vj Reverse recovery energy V = 900 V T = 125C E 455 mJ R vj rec V = -15 V GE / per diode R 32,0 K/kW thJC Thermal resistance, junction to case / per diode RthCH 20,0 K/kW Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: MW date of publication: 2013-10-02 approved by: CL revision: 2.0 2