APTGF350A60G Microchip

APTGF350A60G Phase leg V = 600V CES I = 350A Tc = 80C C NPT IGBT Power Module Application Welding converters VBUS Switched Mode Power Supplies Q1 Uninterruptible Power Supplies G1 Motor control Features E1 OUT Non Punch Through (NPT) Fast IGBT - Low voltage drop Q2 - Low tail current G2 - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF E2 - Low leakage current - RBSOA and SCSOA rated 0/VBUS Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 600 V CES T = 25C 430 c I Continuous Collector Current C T = 80C 350 A c I Pulsed Collector Current T = 25C 1225 CM c V Gate Emitter Voltage 20 V GE T = 25C P Maximum Power Dissipation 1562 W c D RBSOA Reverse Bias Safe Operating Area T = 150C 800A 600V j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-7 www.microsemi.com APTGF350A60G Rev 3 October, 2012 APTGF350A60G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit T = 25C j 200 V = 0V GE I Zero Gate Voltage Collector Current A CES V = 600V T = 125C CE j 1750 T = 25C V =15V j 2.0 2.5 GE V Collector Emitter saturation Voltage V CE(sat) I = 360A C T = 125C 2.2 j V Gate Threshold Voltage V = V , I = 4mA 3 5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 300 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 17.2 ies V = 0V GE V = 25V nF C Output Capacitance CE 1.88 oes f = 1MHz C Reverse Transfer Capacitance 1.6 res Q Total gate Charge 1320 g V = 15V GE Q Gate Emitter Charge V = 300V 1160 nC Bus ge I = 360A C Q Gate Collector Charge 800 gc T Turn-on Delay Time Inductive Switching (25C) 26 d(on) V = 15V GE T Rise Time 25 r V = 400V ns Bus T Turn-off Delay Time 150 d(off) I = 360A C T Fall Time 30 f R = 1.25 G Inductive Switching (125C) T Turn-on Delay Time 26 d(on) V = 15V GE T Rise Time 25 r V = 400V ns Bus T Turn-off Delay Time 170 d(off) I = 360A C T Fall Time 40 f R = 1.25 G V = 15V GE E Turn-on Switching Energy T = 125C 17.2 on j V = 400V Bus mJ I = 360A C E Turn-off Switching Energy T = 125C 14 off j R = 1.25 G Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 600 V RRM T = 25C 750 j I Maximum Reverse Leakage Current V =600V A RM R T = 125C 1500 j I DC Forward Current Tc = 80C 400 A F I = 400A 1.6 1.8 F V Diode Forward Voltage I = 800A 1.9 F V F I = 400A T = 125C F j 1.4 T = 25C 180 j t Reverse Recovery Time ns rr I = 400A F T = 125C 220 j V = 400V R T = 25C 1560 j di/dt =800A/s Q Reverse Recovery Charge nC rr T = 125C 5800 j 2-7 www.microsemi.com APTGF350A60G Rev 3 October, 2012