VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow V , 250 A CE(on) FEATURES Standard: optimized for minimum saturation voltage and low speed Lowest conduction losses available Fully isolated package (2500 V ) AC Very low internal inductance (5 nH typical) Industry standard outline SOT-227 Designed and qualified for industrial level UL approved file E78996 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance V 600 V CES please see www.vishay.com/doc 99912 V (typical) at 200 A, 25 C 1.33 V CE(on) BENEFITS I at T = 90 C 250 A C C Designed for increased operating efficiency in power Speed DC to 1 kHz conversion: UPS, SMPS, TIG welding, induction heating Package SOT-227 Easy to assemble and parallel Circuit configuration Single switch no diode Direct mounting to heatsink Plug-in compatible with other SOT-227 packages ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V 600 V CES T = 25 C 400 C Continuous collector current I C T = 90 C 250 C A Repetitive rating V = 20 V, pulse width limited by GE Pulsed collector current I 400 CM maximum junction temperature Clamped Inductive load current I V = 80 % (V ), V = 20 V, L = 10 H, R = 2.0 400 LM CC CES GE g Gate to emitter voltage V 20 V GE T = 25 C 961 C Power dissipation P W D T = 90 C 462 C Isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T , T -40 - 150 C J Stg Thermal resistance junction to case R - - 0.13 thJC C/W Thermal resistance case to heatsink R Flat, greased surface - 0.05 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Mounting torque Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Case style SOT-227 Revision: 10-Sep-2019 Document Number: 94704 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-GA250SA60S www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 1 mA 600 - - (BR)CES GE C (1) Emitter to collector breakdown voltage V V = 0 V, I = 1.0 A 18 - - (BR)ECS GE C I = 100 A - 1.10 1.3 C I = 200 A - 1.33 1.66 C I = 100 A, T = 125 C - 1.02 - C J Collector to emitter voltage V V = 15 V V CE(on) GE I = 200 A, T = 125 C - 1.32 - C J I = 100 A, T = 150 C - 1.02 - C J I = 200 A, T = 150 C - 1.33 - C J V = V , I = 250 A 3.0 4.5 6.0 CE GE C Gate threshold voltage V GE(th) V = V , I = 250 A, T = 125 C - 3.1 - CE GE C J Temperature coefficient of threshold voltage V /T V = V , I = 1 mA, 25 C to 125 C - -12 - mV/C GE(th) J CE GE C V = 0 V, V = 600 V - 20 1000 A GE CE Collector to emitter leakage current I V = 0 V, V = 600 V, T = 125 C - 0.2 - CES GE CE J mA V = 0 V, V = 600 V, T = 150 C - 0.6 10 GE CE J Gate to emitter leakage current I V = 20 V - - 250 nA GES GE Note (1) Pulse width 80 s duty factor 0.1 % SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q - 770 1200 g Gate-to-emitter charge (turn-on) Q I = 100 A, V = 600 V, V = 15 V - 100 150 nC ge C CC GE Gate-to-collector charge (turn-on) Q - 260 380 gc Turn-on switching loss E -0.55 - on Turn-off switching loss E -25 - mJ off T = 25 C J Total switching loss E - 25.5 - I = 100 A tot C V = 480 V CC Turn-on delay time t - 267 - d(on) V = 15 V GE Rise time t R = 5.0 -42 - r g ns L = 500 H Turn-off delay time t - 310 - d(off) Energy Fall time t losses - 450 - f include tail Turn-on switching loss E -0.67 - on and diode recovery. Turn-off switching loss E - 43.0 - mJ T = 125 C off J Diode used I = 100 A C Total switching loss E - 43.7 - tot 60APH06 V = 480 V CC Turn-on delay time t V = 15 V - 275 - d(on) GE R = 5.0 g Rise time t -50 - r L = 500 H ns Turn-off delay time t - 350 - d(off) Fall time t - 700 - f Between lead and Internal emitter inductance L -5.0 - nH E center of die contact Input capacitance C - 16 250 - ies Output capacitance C V = 0 V, V = 30 V, f = 1.0 MHz - 1040 - pF oes GE CC Reverse transfer capacitance C - 190 - res Revision: 10-Sep-2019 Document Number: 94704 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000